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MT29F64G08CBCABH1-12Z:A

MT29F64G08CBCABH1-12Z:A

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity (64GB)
    • NAND Flash technology
  • Package: BGA (Ball Grid Array)
  • Essence: Reliable and high-performance data storage solution
  • Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

  • Model: MT29F64G08CBCABH1-12Z:A
  • Capacity: 64GB
  • Interface: Parallel
  • Voltage: 3.3V
  • Speed: 12ns
  • Organization: 8Gb x 8
  • Temperature Range: -40°C to +85°C
  • Endurance: 100,000 program/erase cycles
  • Data Retention: Up to 10 years

Detailed Pin Configuration

The MT29F64G08CBCABH1-12Z:A has a total of 48 pins arranged in a specific configuration. The pinout is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. ALE
  29. CLE
  30. RE#
  31. WE#
  32. WP#
  33. R/B#
  34. CE#
  35. CEB#
  36. VSS
  37. DQ0
  38. DQ1
  39. DQ2
  40. DQ3
  41. DQ4
  42. DQ5
  43. DQ6
  44. DQ7
  45. VSS
  46. VSS
  47. NC
  48. VCC

Functional Features

  • High-speed data transfer
  • Reliable and durable storage solution
  • Low power consumption
  • Error correction capabilities
  • Block management for efficient data organization
  • Wear-leveling algorithm for extended lifespan

Advantages

  • Large storage capacity
  • Fast data access and transfer speeds
  • High endurance and reliability
  • Suitable for various applications
  • Low power consumption

Disadvantages

  • Relatively higher cost compared to other memory options
  • Limited compatibility with certain devices due to the parallel interface

Working Principles

The MT29F64G08CBCABH1-12Z:A utilizes NAND Flash technology to store and retrieve data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The device uses a parallel interface to communicate with the host system, enabling fast data transfer.

Detailed Application Field Plans

The MT29F64G08CBCABH1-12Z:A is widely used in various electronic devices and systems that require reliable and high-capacity data storage. Some common application fields include: - Solid-state drives (SSDs) - Embedded systems - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

  • MT29F64G08CBAAA: Same capacity and characteristics, different package (TSOP)
  • MT29F64G08CBACD: Same capacity and characteristics, different interface (SATA)
  • MT29F64G08CBABH1-10Z:A: Same capacity and characteristics, lower speed (10ns)

Note: This is not an exhaustive list of alternative models. Please refer to the manufacturer's documentation for a complete list.

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Énumérez 10 questions et réponses courantes liées à l'application de MT29F64G08CBCABH1-12Z:A dans les solutions techniques

1. What is the MT29F64G08CBCABH1-12Z:A?

The MT29F64G08CBCABH1-12Z:A is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the capacity of the MT29F64G08CBCABH1-12Z:A?

The MT29F64G08CBCABH1-12Z:A has a capacity of 64 gigabits (8 gigabytes).

3. What is the operating voltage range for the MT29F64G08CBCABH1-12Z:A?

The operating voltage range for the MT29F64G08CBCABH1-12Z:A is typically between 2.7V and 3.6V.

4. What is the maximum clock frequency supported by the MT29F64G08CBCABH1-12Z:A?

The MT29F64G08CBCABH1-12Z:A supports a maximum clock frequency of 100 MHz.

5. What is the page size of the MT29F64G08CBCABH1-12Z:A?

The MT29F64G08CBCABH1-12Z:A has a page size of 2,112 bytes.

6. What is the erase block size of the MT29F64G08CBCABH1-12Z:A?

The MT29F64G08CBCABH1-12Z:A has an erase block size of 128 kilobytes.

7. What is the interface used by the MT29F64G08CBCABH1-12Z:A?

The MT29F64G08CBCABH1-12Z:A uses a standard asynchronous NAND interface.

8. What is the typical endurance of the MT29F64G08CBCABH1-12Z:A?

The MT29F64G08CBCABH1-12Z:A has a typical endurance of 3,000 program/erase cycles.

9. What is the operating temperature range for the MT29F64G08CBCABH1-12Z:A?

The operating temperature range for the MT29F64G08CBCABH1-12Z:A is typically between -40°C and +85°C.

10. Is the MT29F64G08CBCABH1-12Z:A suitable for automotive applications?

Yes, the MT29F64G08CBCABH1-12Z:A is designed to meet the requirements of automotive applications and can operate reliably in automotive environments.