Voir les spécifications pour les détails du produit.
MT29F256G08CKCBBH2-10:B
Basic Information Overview
- Category: Memory Device
- Use: Data storage and retrieval
- Characteristics:
- Non-volatile memory
- High capacity (256GB)
- NAND Flash technology
- Package: BGA (Ball Grid Array)
- Essence: Reliable and high-performance data storage solution
- Packaging/Quantity: Individual units in anti-static packaging
Specifications
- Model: MT29F256G08CKCBBH2-10:B
- Capacity: 256GB
- Interface: NAND Flash
- Voltage: 3.3V
- Speed: 10ns
- Package Type: BGA
- Pin Count: 169
Detailed Pin Configuration
The MT29F256G08CKCBBH2-10:B has a total of 169 pins. The pin configuration is as follows:
- VCCQ
- VCC
- NC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- ALE
- CLE
- RE#
- WE#
- WP#
- R/B#
- CE#
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- NC
- GND
Functional Features
- High-speed data transfer
- Reliable and durable storage solution
- Low power consumption
- Error correction capabilities
- Wear-leveling algorithms for extended lifespan
Advantages
- Large storage capacity
- Fast data access and transfer speeds
- Suitable for various applications
- Low power consumption
- Robust and reliable performance
Disadvantages
- Relatively higher cost compared to lower-capacity memory devices
- Limited write endurance compared
Énumérez 10 questions et réponses courantes liées à l'application de MT29F256G08CKCBBH2-10:B dans les solutions techniques
Question: What is the capacity of the MT29F256G08CKCBBH2-10:B?
Answer: The MT29F256G08CKCBBH2-10:B has a capacity of 256 gigabits (32 gigabytes).Question: What is the operating voltage range for this memory chip?
Answer: The operating voltage range for the MT29F256G08CKCBBH2-10:B is 2.7V to 3.6V.Question: What is the maximum clock frequency supported by this memory chip?
Answer: The MT29F256G08CKCBBH2-10:B supports a maximum clock frequency of 100 MHz.Question: Does this memory chip support random access or sequential access?
Answer: The MT29F256G08CKCBBH2-10:B supports random access, allowing for efficient data retrieval.Question: What is the typical read and program time for this memory chip?
Answer: The typical read time for the MT29F256G08CKCBBH2-10:B is 25 ns, while the typical program time is 2000 µs.Question: Can this memory chip be used in automotive applications?
Answer: Yes, the MT29F256G08CKCBBH2-10:B is designed to meet the requirements of automotive applications.Question: Is this memory chip compatible with standard NAND flash interfaces?
Answer: Yes, the MT29F256G08CKCBBH2-10:B is compatible with standard NAND flash interfaces such as ONFI 2.3 and Toggle 2.0.Question: What is the endurance rating of this memory chip?
Answer: The MT29F256G08CKCBBH2-10:B has an endurance rating of 3000 program/erase cycles.Question: Does this memory chip support hardware data protection features?
Answer: Yes, the MT29F256G08CKCBBH2-10:B supports hardware data protection features like ECC (Error Correction Code) and bad block management.Question: What is the temperature range for reliable operation of this memory chip?
Answer: The MT29F256G08CKCBBH2-10:B can reliably operate within a temperature range of -40°C to +85°C.