MT29F1G16ABBDAHC-IT:D TR

Product Overview

Category

The MT29F1G16ABBDAHC-IT:D TR belongs to the category of NAND flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-density storage: The MT29F1G16ABBDAHC-IT:D TR offers a capacity of 1 gigabit (1 Gb), allowing for ample storage space.
• Fast data transfer: With its high-speed interface, this NAND flash memory device enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The MT29F1G16ABBDAHC-IT:D TR is energy-efficient, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, ensuring easy integration into various electronic systems.

Package and Quantity

The MT29F1G16ABBDAHC-IT:D TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from a few hundred to several thousand units per package.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

The MT29F1G16ABBDAHC-IT:D TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. VCCQ
3. ALE
4. CLE
5. CE#
6. RE#
7. WE#
8. WP#
9. R/B#
10. DQ0
11. DQ1
12. DQ2
13. DQ3
14. DQ4
15. DQ5
16. DQ6
17. DQ7
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Program Operation: The MT29F1G16ABBDAHC-IT:D TR supports fast and efficient page program operations, allowing for quick data storage.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Read Operation: The product allows for high-speed data retrieval, ensuring efficient access to stored content.
• Wear-Leveling: The NAND flash memory device incorporates wear-leveling algorithms to distribute write operations evenly across memory cells, enhancing overall lifespan and reliability.

Advantages and Disadvantages

Advantages

• High-density storage capacity
• Fast data transfer rates
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per unit compared to traditional hard disk drives

Working Principles

The MT29F1G16ABBDAHC-IT:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells can be electrically programmed and erased, allowing for non-volatile data storage. The device operates by applying appropriate voltage levels to specific pins to perform read, write, and erase operations on the memory cells.

Detailed Application Field Plans

The MT29F1G16ABBDAHC-IT:D TR finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include:

1. Smartphones and tablets: The product can be used to store operating systems, applications, and user data in mobile devices.
2. Digital cameras: It enables the storage of high-resolution photos and videos captured by digital cameras.
3. Solid-state drives (SSDs): The MT29F1G16ABBDAHC-IT:D TR can serve as the primary storage medium in SSDs, offering fast and reliable data access.

Detailed and Complete Alternative Models

1. MT29F1G