MT29F1G08ABBEAH4-IT:E TR

Product Overview

Category

MT29F1G08ABBEAH4-IT:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBEAH4-IT:E TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: The MT29F1G08ABBEAH4-IT:E TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABBEAH4-IT:E TR is typically packaged in tape and reel format. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of MT29F1G08ABBEAH4-IT:E TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | A0-A16 | Address Inputs | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6 | RE# | Read Enable | | 7 | WE# | Write Enable | | 8-39 | DQ0-DQ31 | Data Input/Output | | 40 | R/B# | Ready/Busy Status | | 41 | WP# | Write Protect | | 42 | VSS | Ground | | 43 | NC | No Connection | | 44 | NC | No Connection | | 45 | NC | No Connection | | 46 | NC | No Connection | | 47 | NC | No Connection | | 48 | NC | No Connection |

Functional Features

• Page Program: The MT29F1G08ABBEAH4-IT:E TR supports page programming, allowing data to be written in small increments.
• Block Erase: It provides the capability to erase entire blocks of data, enabling efficient memory management.
• Random Access: This NAND flash memory allows random access to any location within the memory array, facilitating quick data retrieval.
• Wear-Leveling: The product incorporates wear-leveling algorithms to evenly distribute write operations across the memory cells, prolonging the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity for ample data storage needs.
• Fast data transfer rate for quick read and write operations.
• Reliable performance with advanced error correction techniques.
• Low power consumption, suitable for battery-powered devices.
• Compact package for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Susceptible to data corruption: Power interruptions during write operations can lead to data loss or corruption.

Working Principles

The MT29F1G08ABBEAH4-IT:E TR utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell stores data by trapping electric charges within a floating gate. To read data, the charge level is measured, and for writing, the charge is adjusted using high voltage pulses. Erasing is performed at the block level by removing all charges from the selected blocks.

Detailed Application Field Plans

The MT29F1G08ABBEAH4-IT:E TR finds applications in various electronic devices that require non-volatile storage, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

• MT29F1G08ABBEAH4-IT:E
• MT29F1G