MT29F1G08ABBDAHC-IT:D

Product Overview

Category

The MT29F1G08ABBDAHC-IT:D belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBDAHC-IT:D offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F1G08ABBDAHC-IT:D comes in a compact package, enabling easy integration into various electronic devices.

Package and Quantity

This product is packaged in a small form factor, typically a surface-mount package (SMT). The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F1G08ABBDAHC-IT:D
• Memory Type: NAND Flash
• Capacity: 1 Gb (Gigabit)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: VFBGA (Very Fine Pitch Ball Grid Array)
• Pin Count: 48 pins

Detailed Pin Configuration

The MT29F1G08ABBDAHC-IT:D has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. VCCQ: Power supply voltage for I/O pins
3. WE# (Write Enable): Write control signal
4. CLE (Command Latch Enable): Command latch enable signal
5. A0-A18: Address inputs
6. DQ0-DQ7: Data input/output lines
7. RE# (Read Enable): Read control signal
8. WP# (Write Protect): Write protection control signal
9. R/B# (Ready/Busy): Ready/busy status output
10. CE# (Chip Enable): Chip enable control signal
11. ALE (Address Latch Enable): Address latch enable signal
12. CEB# (CE# Bar): Chip enable inverted control signal
13. RB# (Ready/Busy): Ready/busy status output
14. NC (No Connection): No connection pin

Functional Features

• Page Program Operation: The MT29F1G08ABBDAHC-IT:D supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Random Access: This NAND flash memory allows random access to specific memory locations, facilitating efficient data retrieval.
• Error Correction Code (ECC): It incorporates ECC algorithms to detect and correct errors that may occur during data transmission or storage.
• Wear-Leveling: The MT29F1G08ABBDAHC-IT:D implements wear-leveling techniques to evenly distribute write and erase cycles across memory cells, enhancing overall lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance: NAND flash memory has a finite number of write and erase cycles before it may become unreliable.
• Susceptible to data loss: Power interruptions during write operations can lead to data corruption or loss.

Working Principles

The MT29F1G08ABBDAHC-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read data, the controller applies voltages to specific cells and measures the resulting electrical current. Writing data involves applying precise voltage levels to program cells with the desired charge state.

Detailed Application Field Plans

The MT29F1G08ABBDAHC-IT:D finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality: - Samsung K9K8G08U0D - Toshiba TH58NVG6D2FLA89 - Intel JS29F64G08CAMDB