MT29F1G08ABBDAH4-ITE:D

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity (1 gigabit)
  • Low power consumption
• Package: Integrated circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple chips

Specifications

• Manufacturer: Micron Technology Inc.
• Model: MT29F1G08ABBDAH4-ITE:D
• Memory Type: NAND Flash
• Capacity: 1 gigabit (128 megabytes)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE (Chip Enable)
4. RE (Read Enable)
5. WE (Write Enable)
6. R/B (Ready/Busy)
7. VCC (Power Supply)
8. GND (Ground)
9. DQ0-DQ7 (Data Input/Output)
10. WP (Write Protect)
11. RP (Reset/Power Down)
12. NC (No Connection)

(Note: The remaining pins are not listed for brevity.)

Functional Features

• Fast read and write operations
• Block erase capability
• Error correction code (ECC) support
• Wear-leveling algorithms for extended lifespan
• Bad block management
• Page program and random access capabilities

Advantages

• High storage capacity
• Non-volatile memory retains data even when power is disconnected
• Low power consumption
• Fast data transfer rates
• Durable and reliable for long-term use

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (number of program/erase cycles)
• Susceptible to physical damage if mishandled

Working Principles

The MT29F1G08ABBDAH4-ITE:D is based on NAND flash memory technology. It stores digital information by trapping electrons in a floating gate, which can be electrically programmed and erased. When reading data, the stored charge is measured to determine the stored value. Writing involves applying a high voltage to the control gate, which allows electrons to tunnel into or out of the floating gate, altering its charge.

Detailed Application Field Plans

The MT29F1G08ABBDAH4-ITE:D is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets - Industrial control systems

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP-ITE:D
• MT29F1G08ABAEAWP-ITE:D
• MT29F1G08ABBEAWP-ITE:D
• MT29F1G08ABBFAWP-ITE:D
• MT29F1G08ABBGAWP-ITE:D

(Note: The list above includes only a few alternative models. There are several other variations available from Micron Technology Inc.)

This entry provides an overview of the MT29F1G08ABBDAH4-ITE:D memory chip, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.