MT29F1G08ABAEAWP-ITX:E

Product Overview

Category

MT29F1G08ABAEAWP-ITX:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F1G08ABAEAWP-ITX:E offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F1G08ABAEAWP-ITX:E is available in a compact package, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F1G08ABAEAWP-ITX:E NAND flash memory is typically packaged in a small form factor package, such as a Ball Grid Array (BGA) or Thin Small Outline Package (TSOP). The specific packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 1 gigabit
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of MT29F1G08ABAEAWP-ITX:E can be found in the datasheet provided by the manufacturer. It typically includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of multiple memory cells simultaneously, improving efficiency.
• Read Operation: Facilitates fast and reliable retrieval of stored data.
• Error Correction Code (ECC): Incorporates advanced ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate allows for quick read and write operations.
• Reliable performance with advanced error correction techniques.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into electronic devices.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per gigabit compared to alternative memory solutions.

Working Principles

MT29F1G08ABAEAWP-ITX:E utilizes NAND flash memory technology. It consists of a grid of memory cells that store data using electrically isolated floating-gate transistors. The presence or absence of an electrical charge on the floating gate determines the stored data value (0 or 1). Data can be written by applying appropriate voltage levels, and read by sensing the voltage levels from the memory cells.

Application Field Plans

MT29F1G08ABAEAWP-ITX:E finds applications in various electronic devices that require non-volatile data storage. Some of the potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

There are several alternative models available in the market that offer similar functionality and performance to MT29F1G08ABAEAWP-ITX:E. Some notable alternatives include: - Samsung K9F1G08U0D - Toshiba TC58NVG1S3HBAI4 - Micron MT29F1G08ABADAWP

These alternative models can be considered based on specific requirements, compatibility, and availability.

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