MT29F16G16ADBCAH4-IT:C TR

Product Overview

Category

MT29F16G16ADBCAH4-IT:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F16G16ADBCAH4-IT:C TR offers a storage capacity of 16 gigabits (2 gigabytes), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, enhancing overall device performance.
• Reliable and durable: This product is designed to withstand frequent data access and is resistant to physical shocks, making it suitable for demanding applications.
• Low power consumption: The MT29F16G16ADBCAH4-IT:C TR is energy-efficient, contributing to longer battery life in portable devices.
• Compact package: It comes in a small form factor package, ensuring easy integration into various electronic devices.

Packaging/Quantity

The MT29F16G16ADBCAH4-IT:C TR is typically packaged in tape and reel format, which facilitates automated assembly processes. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F16G16ADBCAH4-IT:C TR
• Memory Type: NAND Flash
• Storage Capacity: 16 gigabits (2 gigabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-ball VFBGA

Detailed Pin Configuration

The MT29F16G16ADBCAH4-IT:C TR has a 48-ball VFBGA package with the following pin configuration:

1. VCC
2. CE#
3. CLE
4. ALE
5. RE#
6. WE#
7. WP#
8. R/B#
9. DQ0
10. DQ1
11. DQ2
12. DQ3
13. DQ4
14. DQ5
15. DQ6
16. DQ7
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Program Operation: The MT29F16G16ADBCAH4-IT:C TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables block erase operations, which erase a large portion of memory simultaneously, improving efficiency.
• Read and Write Protection: This NAND flash memory provides read and write protection features to prevent unauthorized access or modification of stored data.
• Error Correction Code (ECC): ECC functionality is integrated into the chip, ensuring data integrity by detecting and correcting errors during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity for ample data storage needs.
• Fast data transfer rate for enhanced device performance.
• Reliable and durable design for demanding applications.
• Low power consumption for extended battery life.
• Compact package for easy integration into various devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan in certain applications.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F16G16ADBCAH4-IT:C TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured, determining the binary value. The page program operation allows data to be written in small increments, while block erase operations erase a large portion of memory simultaneously.

Detailed Application Field Plans

The MT29F16G16ADBCAH4-IT:C TR finds application in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for storing high-resolution photos and videos. 3