Micron Technology Inc.
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MT29F128G08CFABAWP:B TR

MT29F128G08CFABAWP:B TR

Product Overview

  • Category: Flash Memory
  • Use: Data storage in electronic devices
  • Characteristics:
    • Non-volatile memory
    • High-density storage
    • Fast read and write speeds
  • Package: BGA (Ball Grid Array)
  • Essence: Reliable and high-performance flash memory
  • Packaging/Quantity: Sold individually or in bulk

Specifications

  • Capacity: 128GB
  • Interface: NAND
  • Voltage: 3.3V
  • Organization: 8Gb x 16
  • Page Size: 2KB
  • Block Size: 128KB
  • Operating Temperature: -40°C to +85°C
  • Endurance: 100,000 program/erase cycles
  • Data Retention: Up to 10 years

Pin Configuration

The MT29F128G08CFABAWP:B TR has the following pin configuration:

  1. VCC
  2. GND
  3. A0
  4. A1
  5. A2
  6. A3
  7. A4
  8. A5
  9. A6
  10. A7
  11. A8
  12. A9
  13. A10
  14. A11
  15. A12
  16. A13
  17. A14
  18. A15
  19. RE#
  20. WE#
  21. CLE
  22. ALE
  23. WP#
  24. R/B#
  25. CE#
  26. DQ0
  27. DQ1
  28. DQ2
  29. DQ3
  30. DQ4
  31. DQ5
  32. DQ6
  33. DQ7
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC

Functional Features

  • High-speed data transfer
  • Error correction and detection mechanisms
  • Wear-leveling algorithms for extended lifespan
  • Power-saving features
  • Advanced security features (optional)

Advantages

  • Large storage capacity
  • Fast read and write speeds
  • Reliable and durable
  • Low power consumption
  • Suitable for a wide range of applications

Disadvantages

  • Relatively high cost compared to other storage options
  • Limited endurance compared to some other memory technologies

Working Principles

The MT29F128G08CFABAWP:B TR is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read by applying voltage to specific memory cells. The memory controller manages the operations and ensures data integrity.

Application Field Plans

The MT29F128G08CFABAWP:B TR is widely used in various electronic devices that require non-volatile data storage, such as:

  1. Smartphones and tablets
  2. Solid-state drives (SSDs)
  3. Digital cameras
  4. Portable media players
  5. Automotive infotainment systems
  6. Industrial control systems

Alternative Models

  • MT29F128G08CBACAWP:B TR
  • MT29F128G08CECABWP:B TR
  • MT29F128G08CJCCAWP:B TR
  • MT29F128G08CKCABWP:B TR

These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.

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Énumérez 10 questions et réponses courantes liées à l'application de MT29F128G08CFABAWP:B TR dans les solutions techniques

1. What is the MT29F128G08CFABAWP:B TR?

The MT29F128G08CFABAWP:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology. It has a capacity of 128 gigabytes and is commonly used in various technical solutions.

2. What are the key features of the MT29F128G08CFABAWP:B TR?

Some key features of the MT29F128G08CFABAWP:B TR include its high storage capacity, fast data transfer rates, low power consumption, and built-in error correction capabilities.

3. What are the typical applications of the MT29F128G08CFABAWP:B TR?

The MT29F128G08CFABAWP:B TR is commonly used in applications such as solid-state drives (SSDs), embedded systems, industrial automation, automotive electronics, and other devices that require high-capacity non-volatile storage.

4. What is the interface used by the MT29F128G08CFABAWP:B TR?

The MT29F128G08CFABAWP:B TR uses a standard NAND flash interface, typically either parallel or serial, depending on the specific implementation.

5. What is the operating voltage range of the MT29F128G08CFABAWP:B TR?

The MT29F128G08CFABAWP:B TR operates within a voltage range of 2.7V to 3.6V.

6. Does the MT29F128G08CFABAWP:B TR support wear leveling?

Yes, the MT29F128G08CFABAWP:B TR supports wear leveling, which helps distribute write operations evenly across the memory cells to prolong the lifespan of the flash memory.

7. Can the MT29F128G08CFABAWP:B TR be used in harsh environments?

Yes, the MT29F128G08CFABAWP:B TR is designed to withstand harsh operating conditions and is often used in industrial and automotive applications where temperature, humidity, and vibration can be challenging.

8. What is the MTBF (Mean Time Between Failures) of the MT29F128G08CFABAWP:B TR?

The MTBF of the MT29F128G08CFABAWP:B TR depends on various factors such as usage conditions and implementation. It is recommended to refer to the manufacturer's specifications for specific details.

9. Can the MT29F128G08CFABAWP:B TR be easily integrated into existing systems?

Yes, the MT29F128G08CFABAWP:B TR is designed to be compatible with standard NAND flash interfaces, making it relatively easy to integrate into existing systems that support NAND flash memory.

10. Are there any known compatibility issues or limitations with the MT29F128G08CFABAWP:B TR?

Compatibility issues or limitations may arise depending on the specific system requirements and implementation. It is advisable to consult the manufacturer's documentation and technical support for detailed information regarding compatibility and any potential limitations.