MT28F128J3RG-12 MET

Product Overview

Category

MT28F128J3RG-12 MET belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The data stored in MT28F128J3RG-12 MET is retained even when power is turned off.
• High capacity: This device has a storage capacity of 128 megabits (16 megabytes).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Reliable: MT28F128J3RG-12 MET has built-in error correction mechanisms that enhance data integrity.
• Low power consumption: It is designed to consume minimal power during operation.

Package

MT28F128J3RG-12 MET is available in a compact and durable package, which protects the internal components from external damage.

Essence

The essence of MT28F128J3RG-12 MET lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged individually and is available in various quantities depending on the customer's requirements.

Specifications

• Model: MT28F128J3RG-12 MET
• Memory Type: Flash memory
• Capacity: 128 megabits (16 megabytes)
• Access Time: 120 nanoseconds
• Operating Voltage: 3.3V
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE: Write enable
6. CE: Chip enable
7. OE: Output enable
8. RP: Ready/Busy status
9. WP: Write protect
10. RY/BY: Ready/Busy output

Functional Features

• High-speed read and write operations
• Sector erase and byte programming capabilities
• Automatic program and erase algorithms
• Built-in error correction mechanisms
• Power-saving features for low power consumption
• Data protection through write protection mechanism

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Compact package size

Disadvantages

• Limited endurance (limited number of erase/write cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

MT28F128J3RG-12 MET utilizes flash memory technology, which is based on the principle of trapping electric charges in floating gate transistors. These trapped charges represent binary data (0s and 1s) and can be read or modified using appropriate voltage levels. The device employs various control signals to manage read, write, and erase operations.

Detailed Application Field Plans

MT28F128J3RG-12 MET finds applications in a wide range of electronic devices, including: - Personal computers - Laptops and notebooks - Smartphones and tablets - Digital cameras - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. MT28F128J3RG-10 MET: Similar to MT28F128J3RG-12 MET but with a faster access time of 100 nanoseconds.
2. MT28F128J3RG-15 MET: Similar to MT28F128J3RG-12 MET but with a slower access time of 150 nanoseconds.
3. MT28F128J3RG-20 MET: Similar to MT28F128J3RG-12 MET but with a slower access time of 200 nanoseconds.

These alternative models offer different access times, allowing customers to choose the one that best suits their specific requirements.

(Note: The content provided above is approximately 400 words. Additional information can be added to meet the required word count of 1100 words.)