M29W800DB70ZE6E

Product Overview

Category

M29W800DB70ZE6E belongs to the category of flash memory chips.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The M29W800DB70ZE6E chip has a storage capacity of 8 megabits (1 megabyte).
• Fast read and write speeds: Allows for quick access to stored data.
• Low power consumption: Optimized for energy efficiency.
• Durable design: Resistant to physical shocks and vibrations.
• Wide operating temperature range: Can function reliably in extreme temperature conditions.

Package

The M29W800DB70ZE6E chip is available in a compact surface-mount package. It is designed to be easily integrated into circuit boards and other electronic devices.

Essence

The essence of the M29W800DB70ZE6E chip lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

The chip is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 8 Megabits (1 Megabyte)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP48

Detailed Pin Configuration

The M29W800DB70ZE6E chip features a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. WE#
31. RE#
32. BYTE#
33. WP#
34. RY/BY#
35. VSS
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. VCC
45. VCC
46. VSS
47. VSS
48. NC

Functional Features

• Erase and Program Operations: The chip supports sector erase and byte program operations, allowing for flexible data manipulation.
• Automatic Page Write: Enables efficient programming of multiple bytes in a single operation.
• Hardware Reset Pin: Provides a means to reset the chip to its default state.
• Write Protection: Allows for protection of specific memory sectors from accidental modification.

Advantages and Disadvantages

Advantages

• High storage capacity for its compact size.
• Fast read and write speeds.
• Low power consumption.
• Wide operating temperature range.
• Durable design ensures reliability.

Disadvantages

• Limited storage capacity compared to higher-end flash memory chips.
• Parallel interface may not be suitable for all applications.
• Higher cost compared to some other memory technologies.

Working Principles

The M29W800DB70ZE6E chip utilizes a floating-gate transistor structure to store data. It employs a combination of electrical charges to represent binary information (0s and 1s). The data can be read, written, and erased using specific voltage levels and control signals.

Detailed Application Field Plans

The M29W800DB70ZE6E chip finds application in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• M29W800DB70N6E
• M29W800DB70N1E
• M29W800DB70N3E
• M29W800DB70N4E
• M29W800DB70N5E

These alternative models offer similar specifications and functionality to the M29W800DB70ZE6E chip, providing options for different design requirements and availability from various manufacturers.