M29W640GB70ZS6F TR

Product Overview

Category

M29W640GB70ZS6F TR belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The M29W640GB70ZS6F TR offers a generous storage capacity of 64 gigabytes (GB), allowing users to store a large amount of data.
• Fast data transfer rate: With its advanced technology, this flash memory chip provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The M29W640GB70ZS6F TR is known for its durability and reliability, ensuring that data remains intact even under challenging conditions.
• Low power consumption: This flash memory chip is designed to consume minimal power, making it suitable for battery-powered devices.

Package

The M29W640GB70ZS6F TR comes in a compact package, which includes the flash memory chip itself.

Essence

The essence of the M29W640GB70ZS6F TR lies in its ability to provide ample storage space while maintaining fast and reliable data transfer rates.

Packaging/Quantity

This product is typically packaged individually and is available in varying quantities depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The M29W640GB70ZS6F TR has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. /CE: Chip enable
4. /OE: Output enable
5. /WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. RP/RB: Ready/Busy status
9. WP: Write protect
10. RESET: Reset signal

Functional Features

• Erase and Program Operations: The M29W640GB70ZS6F TR supports both sector erase and byte program operations, allowing for flexible data management.
• Block Locking: This flash memory chip provides the option to lock specific blocks of memory, preventing accidental modification or erasure.
• Error Correction Code (ECC): ECC functionality is integrated into the M29W640GB70ZS6F TR, ensuring data integrity by detecting and correcting errors during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance ensures data integrity.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited compatibility with certain older devices that do not support SPI interface.
• Relatively higher cost compared to lower-capacity flash memory chips.

Working Principles

The M29W640GB70ZS6F TR utilizes NAND flash memory technology to store and retrieve data. It employs a combination of electrical charges and transistors to represent and store binary data.

Detailed Application Field Plans

The M29W640GB70ZS6F TR is widely used in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems

Detailed and Complete Alternative Models

1. M29W640GL70N6F TR
2. M29W640GT70N6F TR
3. M29W640GB70N6F TR
4. M29W640GD70N6F TR

These alternative models offer similar specifications and functionality to the M29W640GB70ZS6F TR, providing users with a range of options for their specific requirements.

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