DS1646P-120

Product Overview

Category: Integrated Circuits (ICs)

Use: The DS1646P-120 is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the functionality of a standard SRAM with that of an EEPROM, providing both volatile and non-volatile storage capabilities.

Characteristics: - Non-volatile storage - High-speed access - Low power consumption - Reliable data retention - Easy integration into existing systems

Package: The DS1646P-120 is available in a 28-pin DIP (Dual In-line Package) format, which allows for easy installation and replacement.

Essence: The essence of the DS1646P-120 lies in its ability to retain data even when power is removed, making it ideal for applications where data persistence is crucial.

Packaging/Quantity: Each DS1646P-120 unit is packaged individually and is available for purchase as a single unit or in bulk quantities.

Specifications

• Memory Size: 16 kilobits (2 kilobytes)
• Supply Voltage: 4.5V to 5.5V
• Access Time: 120 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Minimum 10 years
• Write Endurance: 1 million cycles

Detailed Pin Configuration

The DS1646P-120 features a total of 28 pins, each serving a specific purpose. Here is a detailed pin configuration:

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A10 - Address inputs
4. CE - Chip enable
5. OE - Output enable
6. WE - Write enable
7. DQ0-DQ7 - Data input/output
8. SQW/INT - Square wave output or interrupt output
9. RST - Reset input
10. VBAT - Battery backup voltage

Functional Features

• Non-volatile storage: The DS1646P-120 retains data even when power is removed, ensuring data persistence.
• High-speed access: With an access time of 120 nanoseconds, the DS1646P-120 allows for fast read and write operations.
• Low power consumption: The integrated circuit is designed to minimize power consumption, making it suitable for battery-powered devices.
• Reliable data retention: The DS1646P-120 guarantees a minimum data retention period of 10 years, ensuring long-term reliability.
• Easy integration: The IC can be easily integrated into existing systems due to its standard pin configuration and compatibility with common interfaces.

Advantages and Disadvantages

Advantages: - Combines volatile and non-volatile storage capabilities - Fast access time - Low power consumption - Reliable data retention - Easy integration into existing systems

Disadvantages: - Limited memory size (16 kilobits)

Working Principles

The DS1646P-120 utilizes a combination of SRAM and EEPROM technologies. When power is applied, the device operates as a standard SRAM, allowing for high-speed read and write operations. However, when power is removed, the integrated EEPROM ensures that the data is retained.

The non-volatile storage is achieved by utilizing a small internal battery (VBAT) that powers the EEPROM section, enabling it to maintain the stored data even in the absence of the main power supply.

Detailed Application Field Plans

The DS1646P-120 finds applications in various fields where data persistence is crucial. Some potential application areas include:

1. Industrial control systems
2. Automotive electronics
3. Medical equipment
4. Data logging devices
5. Security systems

Detailed and Complete Alternative Models

1. DS1646P-80: Similar to the DS1646P-120, but with an access time of 80 nanoseconds.
2. DS1646P-200: Similar to the DS1646P-120, but with an access time of 200 nanoseconds.
3. DS1646P-256: Similar to the DS1646P-120, but with a larger memory size of 256 kilobits.

These alternative models offer different specifications to cater to specific application requirements.

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