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IXTT26N60P
Product Overview
Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: Power transistor for high power applications
Packaging/Quantity: Typically sold in reels of 50 or 100 units
Specifications
- Voltage Rating: 600V
- Current Rating: 26A
- RDS(ON): 0.19Ω
- Gate Threshold Voltage: 4V
- Maximum Power Dissipation: 200W
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IXTT26N60P has a standard TO-220AB pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance
- Fast switching speed
- High input impedance
- Avalanche energy specified
Advantages and Disadvantages
Advantages: - High voltage and current ratings - Low on-state resistance - Fast switching speed
Disadvantages: - Higher gate threshold voltage compared to some alternative models - Relatively higher package size
Working Principles
The IXTT26N60P operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IXTT26N60P is suitable for various high power applications including: - Switched-mode power supplies - Motor control - Inverters - Industrial equipment
Detailed and Complete Alternative Models
Some alternative models to the IXTT26N60P include: - IRFP460: Similar voltage and current ratings - STW26NM60: Comparable specifications and package type - FDPF26N50: Lower on-state resistance
In conclusion, the IXTT26N60P is a high-voltage, high-current power MOSFET designed for demanding applications where low on-state resistance and fast switching speeds are essential.
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Énumérez 10 questions et réponses courantes liées à l'application de IXTT26N60P dans les solutions techniques
What is IXTT26N60P?
- IXTT26N60P is a high voltage, high speed IGBT (Insulated Gate Bipolar Transistor) designed for various technical applications requiring efficient power switching.
What are the key features of IXTT26N60P?
- The key features of IXTT26N60P include a high voltage capability, low VCE(sat), fast switching speed, and ruggedness to handle high power applications.
What are the typical applications of IXTT26N60P?
- Typical applications of IXTT26N60P include motor control, induction heating, power supplies, renewable energy systems, and welding equipment.
What is the maximum voltage and current rating of IXTT26N60P?
- IXTT26N60P has a maximum voltage rating of 600V and a maximum current rating of 40A.
What is the thermal resistance of IXTT26N60P?
- The thermal resistance of IXTT26N60P is typically around 0.75°C/W, which indicates its ability to dissipate heat efficiently.
Does IXTT26N60P require a gate driver for operation?
- Yes, IXTT26N60P requires an external gate driver to control its switching characteristics effectively.
Can IXTT26N60P be used in parallel configurations for higher power applications?
- Yes, IXTT26N60P can be used in parallel configurations to increase the overall current handling capability in high power applications.
What are the recommended operating conditions for IXTT26N60P?
- The recommended operating conditions for IXTT26N60P include a maximum junction temperature of 150°C, proper gate drive voltage, and adequate heatsinking for thermal management.
Is IXTT26N60P suitable for use in automotive applications?
- Yes, IXTT26N60P is suitable for certain automotive applications such as electric vehicle powertrains and battery management systems.
Where can I find detailed application notes and reference designs for IXTT26N60P?
- Detailed application notes and reference designs for IXTT26N60P can be found on the manufacturer's website or through authorized distributors.