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IXTT170N10P

IXTT170N10P

Product Overview

Category:

The IXTT170N10P belongs to the category of power MOSFETs.

Use:

It is used as a high-voltage, high-speed switching device in various electronic circuits and applications.

Characteristics:

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package:

The IXTT170N10P is typically available in a TO-220 package.

Essence:

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity:

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 170A
  • On-Resistance (RDS(on)): 10mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 300W

Detailed Pin Configuration

The IXTT170N10P typically has three pins: gate, drain, and source. The pin configuration is as follows: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features

  • High voltage capability allows for use in high-power applications
  • Low input capacitance enables fast switching speeds
  • Low on-resistance minimizes power loss and heat generation

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for demanding applications
  • Fast switching speed for efficient operation
  • Low on-resistance reduces power dissipation

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful handling due to its high power capabilities

Working Principles

The IXTT170N10P operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IXTT170N10P is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - Welding equipment - High-power audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IXTT170N10P include: - IRFP4668PbF - FDPF33N25T - STP75NF75

In conclusion, the IXTT170N10P is a high-voltage power MOSFET with excellent characteristics for various high-power electronic applications, offering efficient switching and power management capabilities.

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Énumérez 10 questions et réponses courantes liées à l'application de IXTT170N10P dans les solutions techniques

  1. What is IXTT170N10P?

    • IXTT170N10P is a power MOSFET transistor designed for high power applications.
  2. What is the maximum voltage and current rating of IXTT170N10P?

    • The maximum voltage rating is 100V, and the maximum continuous drain current is 170A.
  3. What are the typical applications of IXTT170N10P?

    • It is commonly used in applications such as motor control, power supplies, and inverters.
  4. What is the on-state resistance of IXTT170N10P?

    • The on-state resistance is typically very low, around 0.007 ohms.
  5. Is IXTT170N10P suitable for high-frequency switching applications?

    • Yes, it is designed to handle high-frequency switching due to its low on-state resistance and fast switching characteristics.
  6. Does IXTT170N10P require a heat sink for operation?

    • Yes, due to its high power handling capability, it is recommended to use a heat sink to dissipate heat effectively.
  7. What are the thermal characteristics of IXTT170N10P?

    • The thermal resistance from junction to case (RθJC) is typically low, allowing for efficient heat dissipation.
  8. Can IXTT170N10P be used in automotive applications?

    • Yes, it is suitable for automotive applications due to its high current and voltage ratings.
  9. What are the protection features of IXTT170N10P?

    • It may include features such as overcurrent protection, overtemperature protection, and short-circuit protection.
  10. Where can I find the detailed datasheet for IXTT170N10P?

    • The datasheet can be found on the manufacturer's website or through authorized distributors.