IXYS
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
IXGK28N140B3H1
Voir les détails DataSheets

IXGK28N140B3H1 Product Overview

Introduction

The IXGK28N140B3H1 belongs to the category of power MOSFETs and is designed for use in high-power applications. This product offers unique characteristics, packaging, and quantity options that make it suitable for a wide range of industrial and commercial uses.

Basic Information Overview

  • Category: Power MOSFET
  • Use: High-power applications
  • Characteristics: High voltage tolerance, low on-resistance, efficient thermal management
  • Package: TO-247
  • Essence: Efficient power management
  • Packaging/Quantity: Available in reels of 1000 units

Specifications

  • Voltage Rating: 140V
  • Current Rating: 28A
  • On-Resistance: 3mΩ
  • Gate Charge: 28nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IXGK28N140B3H1 features a standard TO-247 pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage tolerance for robust performance in demanding applications
  • Low on-resistance for efficient power transfer
  • Efficient thermal management for enhanced reliability
  • Fast switching speed for improved power control

Advantages and Disadvantages

Advantages

  • High voltage rating suitable for diverse applications
  • Low on-resistance minimizes power loss
  • Efficient thermal management ensures reliable operation

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Larger physical footprint may not be suitable for space-constrained designs

Working Principles

The IXGK28N140B3H1 operates based on the principles of field-effect transistors, utilizing its high voltage tolerance and low on-resistance to effectively control power flow in high-power circuits.

Detailed Application Field Plans

This power MOSFET is ideal for use in: - Industrial motor drives - Power supplies - Renewable energy systems - Electric vehicles

Detailed and Complete Alternative Models

  • IXGH28N140B3H1
  • IRF1405PBF
  • FDPF33N25T

In conclusion, the IXGK28N140B3H1 power MOSFET offers high-performance characteristics suitable for a wide range of high-power applications, making it a versatile choice for demanding industrial and commercial needs.

[Word Count: 324]

Énumérez 10 questions et réponses courantes liées à l'application de IXGK28N140B3H1 dans les solutions techniques

  1. What is IXGK28N140B3H1?

    • IXGK28N140B3H1 is a high-power semiconductor device designed for use in various technical solutions, such as power electronics and motor control applications.

  2. What are the key features of IXGK28N140B3H1?

    • The key features of IXGK28N140B3H1 include high voltage and current ratings, low on-state voltage drop, fast switching capability, and robust thermal performance.

  3. In what technical solutions can IXGK28N140B3H1 be used?

    • IXGK28N140B3H1 can be used in applications such as motor drives, renewable energy systems, industrial automation, and power supplies.

  4. What are the benefits of using IXGK28N140B3H1 in technical solutions?

    • Using IXGK28N140B3H1 can result in improved efficiency, higher power density, and enhanced reliability in various technical solutions.

  5. What are the typical operating conditions for IXGK28N140B3H1?

    • The typical operating conditions for IXGK28N140B3H1 include a maximum voltage rating, current rating, and temperature range, which should be carefully considered for proper application.

  6. Are there any specific design considerations when integrating IXGK28N140B3H1 into a technical solution?

    • Yes, design considerations such as gate drive requirements, thermal management, and protection circuitry should be taken into account to ensure optimal performance and reliability.

  7. What are the potential challenges or limitations when using IXGK28N140B3H1 in technical solutions?

    • Some potential challenges may include managing high currents, minimizing switching losses, and addressing electromagnetic interference (EMI) issues.

  8. Are there any recommended application notes or reference designs available for IXGK28N140B3H1?

    • Yes, manufacturers often provide application notes, reference designs, and simulation models to assist engineers in implementing IXGK28N140B3H1 in their technical solutions.

  9. How does IXGK28N140B3H1 compare to other similar devices in the market?

    • IXGK28N140B3H1 may offer advantages in terms of performance, cost-effectiveness, or specific application suitability compared to other similar devices, depending on the specific requirements of the technical solution.

  10. Where can I find reliable technical support or documentation for IXGK28N140B3H1?

    • Reliable technical support and documentation for IXGK28N140B3H1 can typically be obtained from the manufacturer's website, authorized distributors, or through direct contact with the manufacturer's application engineering team.