IXYS
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
IXFN64N50PD3
Voir les détails DataSheets

IXFN64N50PD3

Product Overview

Category

The IXFN64N50PD3 belongs to the category of power MOSFETs.

Use

It is used for high-power applications such as power supplies, motor control, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IXFN64N50PD3 is typically available in a TO-264 package.

Essence

The essence of the IXFN64N50PD3 lies in its ability to efficiently handle high power levels while maintaining low on-resistance.

Packaging/Quantity

It is commonly packaged in reels or tubes and is available in varying quantities depending on the supplier.

Specifications

  • Voltage Rating: 500V
  • Current Rating: 64A
  • On-Resistance: 0.085Ω
  • Gate Threshold Voltage: 2.5V
  • Total Gate Charge: 90nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFN64N50PD3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient control in various applications.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful handling due to sensitivity to static electricity

Working Principles

The IXFN64N50PD3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXFN64N50PD3 is well-suited for use in the following applications: - Power supplies - Motor control systems - Inverters for renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN64N50PD3 include: - IRFP4668PbF - FDPF51N25T - STW45NM50FD

In conclusion, the IXFN64N50PD3 is a high-performance power MOSFET suitable for demanding high-power applications. Its combination of high voltage capability, low on-resistance, and fast switching speed make it an ideal choice for power supply, motor control, and inverter applications.

[Word count: 399]

Énumérez 10 questions et réponses courantes liées à l'application de IXFN64N50PD3 dans les solutions techniques

  1. What is the maximum drain-source voltage of IXFN64N50PD3?

    • The maximum drain-source voltage of IXFN64N50PD3 is 500V.

  2. What is the continuous drain current rating of IXFN64N50PD3?

    • The continuous drain current rating of IXFN64N50PD3 is 64A.

  3. What is the on-state resistance (RDS(on)) of IXFN64N50PD3?

    • The on-state resistance (RDS(on)) of IXFN64N50PD3 is typically 0.085 ohms.

  4. What is the gate threshold voltage of IXFN64N50PD3?

    • The gate threshold voltage of IXFN64N50PD3 is typically 4V.

  5. What are the typical applications for IXFN64N50PD3?

    • IXFN64N50PD3 is commonly used in applications such as motor drives, inverters, and power supplies.

  6. What is the maximum junction temperature of IXFN64N50PD3?

    • The maximum junction temperature of IXFN64N50PD3 is 150°C.

  7. What is the input capacitance of IXFN64N50PD3?

    • The input capacitance of IXFN64N50PD3 is typically 3200pF.

  8. Does IXFN64N50PD3 have built-in protection features?

    • Yes, IXFN64N50PD3 has built-in overcurrent protection and thermal shutdown features.

  9. What is the package type of IXFN64N50PD3?

    • IXFN64N50PD3 comes in a TO-268 package.

  10. What are the recommended operating conditions for IXFN64N50PD3?

    • The recommended operating temperature range for IXFN64N50PD3 is -55°C to 150°C, and the recommended gate-source voltage is typically 10V.