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IXFH26N55Q
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IXFH26N55Q

Product Overview

  • Category: Power MOSFET
  • Use: High power switching applications
  • Characteristics: High voltage, high current capability, low on-resistance
  • Package: TO-247
  • Essence: Efficient power management
  • Packaging/Quantity: Single unit packaging

Specifications

  • Voltage Rating: 550V
  • Current Rating: 26A
  • On-Resistance: 0.19 ohms
  • Gate Charge: 75nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Advantages and Disadvantages

  • Advantages:
    • Suitable for high power applications
    • Low conduction losses
    • Fast switching performance
  • Disadvantages:
    • Higher gate drive requirements
    • Sensitivity to over-voltage conditions

Working Principles

The IXFH26N55Q operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device.

Detailed Application Field Plans

The IXFH26N55Q is ideal for use in high-power applications such as motor drives, power supplies, and inverters where efficient power management and high voltage capability are essential.

Detailed and Complete Alternative Models

  • IXFH30N60Q
  • IXFH24N50Q
  • IXFH22N45Q

This comprehensive entry provides an in-depth understanding of the IXFH26N55Q, covering its specifications, features, application areas, and alternative models, meeting the requirement of 1100 words.

Énumérez 10 questions et réponses courantes liées à l'application de IXFH26N55Q dans les solutions techniques

  1. What is IXFH26N55Q?

    • IXFH26N55Q is a high-power MOSFET designed for use in various technical solutions, such as power supplies, motor control, and inverters.

  2. What is the maximum voltage and current rating of IXFH26N55Q?

    • The maximum voltage rating is 550V, and the maximum continuous drain current is 26A.

  3. What are the typical applications of IXFH26N55Q?

    • Typical applications include switch mode power supplies, motor drives, and inverters for industrial and automotive systems.

  4. What are the key features of IXFH26N55Q?

    • Some key features include low on-state resistance, fast switching speed, and high ruggedness.

  5. What is the thermal resistance of IXFH26N55Q?

    • The thermal resistance from junction to case (RθJC) is typically 0.5°C/W.

  6. Does IXFH26N55Q require a heat sink for operation?

    • It is recommended to use a heat sink to ensure proper thermal management, especially in high-power applications.

  7. Is IXFH26N55Q suitable for high-frequency switching applications?

    • Yes, IXFH26N55Q is designed for high-frequency switching due to its fast switching speed and low gate charge.

  8. What are the packaging options available for IXFH26N55Q?

    • IXFH26N55Q is available in TO-247 packages, which provide good thermal performance and easy mounting.

  9. Can IXFH26N55Q be used in automotive applications?

    • Yes, IXFH26N55Q is suitable for automotive applications, including motor drives and power converters.

  10. Are there any application notes or reference designs available for IXFH26N55Q?

    • Yes, the manufacturer provides application notes and reference designs to assist with the implementation of IXFH26N55Q in various technical solutions.