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IXFE48N50QD3
Product Overview
- Category: Power MOSFET
- Use: High-power switching applications
- Characteristics: High voltage, high current capability, low on-state resistance
- Package: TO-264
- Essence: Efficient power management
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Voltage Rating: 500V
- Current Rating: 48A
- On-State Resistance: 50mΩ
- Gate Charge: 48nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Pin 1: Source
- Pin 2: Gate
- Pin 3: Drain
Functional Features
- High voltage and current handling capacity
- Low on-state resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Robust design for reliable performance in demanding applications
Advantages
- Suitable for high-power applications
- Low conduction losses
- Enhanced thermal performance
- Reliable and durable construction
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Requires careful consideration of heat dissipation in high-power applications
Working Principles
The IXFE48N50QD3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows high current to pass through with minimal resistance, enabling efficient power switching.
Detailed Application Field Plans
This MOSFET is well-suited for various high-power applications, including: - Switch-mode power supplies - Motor drives - Inverters - Welding equipment - Renewable energy systems
Detailed and Complete Alternative Models
- IXFN48N50Q
- IRFP460
- STW48N50
Note: The alternative models listed above are comparable in terms of voltage and current ratings, but users should verify compatibility with their specific application requirements.
This comprehensive entry provides an in-depth understanding of the IXFE48N50QD3 Power MOSFET, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
Énumérez 10 questions et réponses courantes liées à l'application de IXFE48N50QD3 dans les solutions techniques
What is IXFE48N50QD3?
- IXFE48N50QD3 is a high-performance, low-loss 500V/48A MOSFET designed for various power applications.
What are the key features of IXFE48N50QD3?
- The key features include low on-state resistance, fast switching speed, high avalanche energy, and low gate charge.
In what technical solutions can IXFE48N50QD3 be used?
- IXFE48N50QD3 can be used in applications such as power supplies, motor drives, inverters, and welding equipment.
What are the advantages of using IXFE48N50QD3 in power supplies?
- Using IXFE48N50QD3 in power supplies can result in higher efficiency, reduced heat dissipation, and improved overall performance.
How does IXFE48N50QD3 contribute to motor drive applications?
- In motor drive applications, IXFE48N50QD3 enables precise control, lower power losses, and enhanced reliability.
Can IXFE48N50QD3 be used in high-frequency inverter designs?
- Yes, IXFE48N50QD3 is suitable for high-frequency inverter designs due to its fast switching speed and low gate charge.
What thermal management considerations should be taken into account when using IXFE48N50QD3?
- Proper heat sinking and thermal design are crucial to ensure optimal performance and reliability when using IXFE48N50QD3.
Are there any application notes or reference designs available for IXFE48N50QD3?
- Yes, IXYS, the manufacturer of IXFE48N50QD3, provides application notes and reference designs to assist with its implementation in various technical solutions.
What are the typical operating conditions for IXFE48N50QD3?
- The typical operating conditions include a maximum voltage of 500V, a continuous drain current of 48A, and a junction temperature range of -55°C to 150°C.
Where can I find detailed specifications and datasheets for IXFE48N50QD3?
- Detailed specifications and datasheets for IXFE48N50QD3 can be found on the official website of IXYS or through authorized distributors.