IXDD504SIAT/R

Product Overview

Category: Integrated Circuit (IC)

Use: IXDD504SIAT/R is a high-performance dual low-side gate driver IC designed for driving MOSFETs and IGBTs in various applications.

Characteristics: - High voltage capability - Fast switching speed - Low power consumption - Wide operating temperature range - Compact package size

Package: The IXDD504SIAT/R is available in a small surface mount 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence: This gate driver IC provides efficient and reliable control of power devices, ensuring optimal performance and protection in electronic circuits.

Packaging/Quantity: The IXDD504SIAT/R is typically sold in reels containing 250 units per reel.

Specifications

• Supply Voltage Range: 4.5V to 35V
• Output Current: 4A (peak)
• Propagation Delay: 50ns (typical)
• Rise/Fall Time: 15ns (typical)
• Operating Temperature Range: -40°C to +125°C

Pin Configuration

The IXDD504SIAT/R features the following pin configuration:

1. VCC - Power supply input
2. IN1 - Input control signal for channel 1
3. GND - Ground reference
4. OUT1 - Output for channel 1
5. VS - Bootstrap supply voltage
6. IN2 - Input control signal for channel 2
7. OUT2 - Output for channel 2
8. VEE - Negative power supply

Functional Features

• Dual-channel design allows independent control of two power devices.
• High output current capability enables fast and efficient switching.
• Bootstrap supply voltage ensures proper gate drive even at high voltages.
• Built-in protection features such as under-voltage lockout and thermal shutdown enhance system reliability.

Advantages and Disadvantages

Advantages: - High voltage capability enables use in a wide range of applications. - Fast switching speed improves overall system performance. - Low power consumption helps reduce energy consumption. - Compact package size allows for space-efficient circuit design.

Disadvantages: - Limited output current may not be suitable for high-power applications. - Requires external bootstrap capacitor for proper operation. - Higher cost compared to basic gate driver ICs.

Working Principles

The IXDD504SIAT/R operates by receiving input control signals (IN1 and IN2) and generating corresponding output signals (OUT1 and OUT2) to drive the gates of MOSFETs or IGBTs. The bootstrap supply voltage (VS) ensures proper gate drive even at high voltages. The IC incorporates internal protection mechanisms, such as under-voltage lockout and thermal shutdown, to safeguard the power devices and the overall system.

Detailed Application Field Plans

The IXDD504SIAT/R is commonly used in various applications, including: - Motor control systems - Switch-mode power supplies - Inverters and converters - Industrial automation - Automotive electronics

Alternative Models

• IXDD504SIA - Similar specifications and features, but with active-high inputs
• IXDD504PIA - Similar specifications and features, but with active-low inputs
• IXDD504SI - Single-channel version of the dual-channel IXDD504SIAT/R

These alternative models provide flexibility in choosing the appropriate gate driver IC based on specific application requirements.

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