IS66WVE4M16EBLL-55BLI-TR

Product Overview

Category

IS66WVE4M16EBLL-55BLI-TR belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Compact size
• Reliable performance

Package

IS66WVE4M16EBLL-55BLI-TR is available in a small form factor package, designed to fit seamlessly into various electronic devices.

Essence

The essence of IS66WVE4M16EBLL-55BLI-TR lies in its ability to efficiently store and retrieve digital data, enhancing the overall functionality of electronic devices.

Packaging/Quantity

IS66WVE4M16EBLL-55BLI-TR is typically packaged in reels or trays, with each package containing a specific quantity of memory modules.

Specifications

• Model: IS66WVE4M16EBLL-55BLI-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 4 Megabits x 16
• Operating Voltage: 3.3V
• Speed Grade: -55°C to +85°C
• Interface: Parallel
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

The IS66WVE4M16EBLL-55BLI-TR memory module has the following pin configuration:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /BA0
40. /BA1
41. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• Low power standby mode
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• High storage capacity allows for the storage of large amounts of data.
• Fast data access speed ensures quick retrieval of information.
• Low power consumption helps conserve energy in electronic devices.
• Compact size enables integration into space-constrained designs.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility with certain older systems that do not support SDRAM technology.
• Higher cost compared to some other memory technologies.

Working Principles

IS66WVE4M16EBLL-55BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It uses a clock signal to synchronize data transfers between the memory module and the device it is connected to. The memory cells store digital information in the form of electrical charges, which can be read or written by the device.

Detailed Application Field Plans

IS66WVE4M16EBLL-55BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Consumer electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS66WVE4M16EBLL-55BLI-TR include: - IS66WVE4M16DALL-55BLI-TR - IS66WVE4M16EALL-55BLI-TR - IS66WVE4M16EBLL-75BLI-TR - IS66WVE4M16EBLL-85BLI-TR

These alternative models may have different specifications or characteristics, so it is important to carefully evaluate their suitability for specific applications.

In conclusion, IS66WVE4M16EBLL-55BLI-TR is a memory product that offers high storage capacity, fast data access speed, low power consumption, and reliable performance. It is widely used in various electronic devices and has several alternative