IS65WV25616DBLL-55CTLA3-TR

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-density - Low-power consumption - Wide temperature range - Small form factor

Package: Ball Grid Array (BGA)

Essence: This IC is a high-density memory device that offers low-power consumption and operates over a wide temperature range. It is designed to provide reliable storage for various applications.

Packaging/Quantity: The IS65WV25616DBLL-55CTLA3-TR is typically packaged in reels and comes in quantities of 2500 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Density: 256 Megabits (32 Megabytes)
• Organization: 16M words x 16 bits
• Operating Voltage: 2.5V ± 0.2V
• Clock Frequency: 166 MHz
• Access Time: 5.5 ns
• Interface: Parallel
• Package Dimensions: 8mm x 10mm

Detailed Pin Configuration

The IS65WV25616DBLL-55CTLA3-TR has a total of 66 pins. Here is the detailed pin configuration:

1. VDDQ
2. DQ15
3. DQ14
4. DQ13
5. DQ12
6. DQ11
7. DQ10
8. DQ9
9. DQ8
10. VSSQ
11. DQ7
12. DQ6
13. DQ5
14. DQ4
15. DQ3
16. DQ2
17. DQ1
18. DQ0
19. VDD
20. VSS
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. A16
38. A17
39. A18
40. A19
41. A20
42. A21
43. A22
44. A23
45. A24
46. A25
47. A26
48. A27
49. A28
50. A29
51. A30
52. A31
53. /CAS
54. /RAS
55. /WE
56. CKE
57. /CS
58. DQM1
59. DQM0
60. /LDQS
61. LDQS
62. UDQS
63. UDQS#
64. /CKE
65. /RESET
66. VDDQ

Functional Features

• Synchronous operation with a clock frequency of 166 MHz
• Burst mode for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) to improve signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages: - High-density memory storage - Low-power consumption - Wide temperature range support - Small form factor for space-constrained applications - Efficient data transfer with burst mode - Power-saving features with auto-refresh and self-refresh modes

Disadvantages: - Limited maximum clock frequency compared to some other memory devices - Parallel interface may not be suitable for all applications

Working Principles

The IS65WV25616DBLL-55CTLA3-TR is a synchronous dynamic random-access memory (SDRAM) device. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into rows and columns, and data is accessed by specifying the row and column addresses.

During operation, the memory operates synchronously with an external clock signal. Data can be read from or written to the memory in bursts, allowing for efficient data transfer. The device also supports various power-saving modes, such as auto-refresh and self-refresh, to reduce power consumption when idle.

Detailed Application Field Plans

The IS65WV25616DBLL-55CTLA3-TR is widely used in various electronic devices and systems that require high-density memory storage. Some common application fields include:

1. Computer Systems: Used as main memory in desktop computers, laptops, and servers.
2. Networking Equipment: Used for packet buffering and caching in routers, switches, and network appliances.
3. Consumer Electronics: Integrated into smart TVs, set