ISSI, Integrated Silicon Solution Inc
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IS62WV25616DALL-55TI
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IS62WV25616DALL-55TI

Product Overview

Category

IS62WV25616DALL-55TI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

  • High-speed operation
  • Low power consumption
  • Large storage capacity
  • Reliable performance
  • Compact package size

Package

IS62WV25616DALL-55TI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS62WV25616DALL-55TI is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K words × 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 55ns
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 48 pins

Detailed Pin Configuration

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. OE#
  19. WE#
  20. BYTE#
  21. NC
  22. DQ0
  23. DQ1
  24. DQ2
  25. DQ3
  26. DQ4
  27. DQ5
  28. DQ6
  29. DQ7
  30. DQ8
  31. DQ9
  32. DQ10
  33. DQ11
  34. DQ12
  35. DQ13
  36. DQ14
  37. DQ15
  38. VSS
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed random access
  • Low power consumption in standby mode
  • Easy interfacing with other digital circuits
  • Byte write and read operations
  • Automatic power-down mode for reduced power consumption

Advantages

  • Fast data access and retrieval
  • Low power consumption, making it suitable for battery-powered devices
  • Compact package size allows for space-efficient designs
  • Reliable performance ensures data integrity
  • Easy integration with existing electronic systems

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Relatively higher cost per bit compared to some alternative memory options
  • Sensitivity to electromagnetic interference (EMI) may require additional shielding measures

Working Principles

IS62WV25616DALL-55TI operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

IS62WV25616DALL-55TI finds applications in various fields, including: 1. Computer systems 2. Networking equipment 3. Telecommunications devices 4. Industrial automation 5. Automotive electronics 6. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS62WV25616DALL-55TI include: 1. MT45W8MW16BGX-701IT 2. CY62157EV30LL-45ZSXI 3. AS6C4008-55BIN

These models have comparable specifications and can be considered as alternatives based on specific requirements and availability.

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Énumérez 10 questions et réponses courantes liées à l'application de IS62WV25616DALL-55TI dans les solutions techniques

Sure! Here are 10 common questions and answers related to the application of IS62WV25616DALL-55TI in technical solutions:

  1. Question: What is IS62WV25616DALL-55TI?
    - Answer: IS62WV25616DALL-55TI is a specific model of synchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Silicon Solution Inc. It has a capacity of 256 megabits (32 megabytes) and operates at a speed of 55 nanoseconds.

  2. Question: What are the typical applications of IS62WV25616DALL-55TI?
    - Answer: IS62WV25616DALL-55TI is commonly used in various technical solutions such as embedded systems, networking equipment, telecommunications devices, industrial automation, and other applications that require high-speed and reliable memory storage.

  3. Question: What is the voltage requirement for IS62WV25616DALL-55TI?
    - Answer: IS62WV25616DALL-55TI operates at a voltage range of 2.7V to 3.6V.

  4. Question: Can IS62WV25616DALL-55TI be used in battery-powered devices?
    - Answer: Yes, IS62WV25616DALL-55TI can be used in battery-powered devices as it operates within the voltage range typically provided by batteries.

  5. Question: Does IS62WV25616DALL-55TI support multiple read and write operations simultaneously?
    - Answer: No, IS62WV25616DALL-55TI is a synchronous SRAM and does not support simultaneous read and write operations. It follows a synchronous interface protocol.

  6. Question: What is the operating temperature range for IS62WV25616DALL-55TI?
    - Answer: IS62WV25616DALL-55TI is designed to operate within a temperature range of -40°C to +85°C.

  7. Question: Can IS62WV25616DALL-55TI be used as a direct replacement for other SRAM chips with different specifications?
    - Answer: It depends on the specific requirements and compatibility of the system. While IS62WV25616DALL-55TI can be used as a replacement in many cases, it is important to verify compatibility with the system's timing, voltage, and interface requirements.

  8. Question: Does IS62WV25616DALL-55TI have any built-in error correction capabilities?
    - Answer: No, IS62WV25616DALL-55TI does not have built-in error correction capabilities. If error correction is required, it needs to be implemented externally.

  9. Question: Can IS62WV25616DALL-55TI be used in high-reliability applications?
    - Answer: Yes, IS62WV25616DALL-55TI is suitable for high-reliability applications as it offers reliable data storage and operates within industrial temperature ranges.

  10. Question: Are there any specific design considerations when using IS62WV25616DALL-55TI in a circuit?
    - Answer: When designing with IS62WV25616DALL-55TI, it is important to consider proper decoupling capacitors, signal integrity, and adhere to the recommended layout guidelines provided in the datasheet to ensure optimal performance and reliability.