IS61VF102418A-6.5B3I-TR

Product Overview

Category

IS61VF102418A-6.5B3I-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size

Package

IS61VF102418A-6.5B3I-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61VF102418A-6.5B3I-TR is typically packaged in reels and comes in quantities of 2500 units per reel.

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Organization: 128K words x 8 bits
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61VF102418A-6.5B3I-TR is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VCC - Power Supply
10. A8 - Address Input
11. A9 - Address Input
12. A10 - Address Input
13. A11 - Address Input
14. A12 - Address Input
15. A13 - Address Input
16. A14 - Address Input
17. A15 - Address Input
18. /CE - Chip Enable Input
19. /OE - Output Enable Input
20. I/O0 - Data Input/Output
21. I/O1 - Data Input/Output
22. I/O2 - Data Input/Output
23. I/O3 - Data Input/Output
24. I/O4 - Data Input/Output
25. I/O5 - Data Input/Output
26. I/O6 - Data Input/Output
27. I/O7 - Data Input/Output
28. GND - Ground

Functional Features

• Random access memory (RAM) functionality
• Non-volatile storage capability
• High-speed data transfer
• Low power consumption
• Easy integration into electronic systems

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact package size for space-constrained applications

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per bit compared to some alternative memory solutions

Working Principles

IS61VF102418A-6.5B3I-TR is based on the principle of storing digital information in a matrix of memory cells. These memory cells can be electrically programmed and erased, allowing for non-volatile storage of data. The device utilizes an address bus and data bus to read from and write to specific memory locations.

Detailed Application Field Plans

IS61VF102418A-6.5B3I-TR finds application in various electronic devices that require reliable and fast data storage. Some potential application fields include:

1. Consumer electronics: Smartphones, tablets, digital cameras
2. Automotive: Infotainment systems, navigation systems
3. Industrial: Control systems, data loggers
4. Networking: Routers, switches

Detailed and Complete Alternative Models

1. IS61LV25616AL-10TLI - 256K x 16 High-Speed CMOS Static RAM
2. IS62WV1288BLL-55HLI - 128K x 8 Low-Power CMOS Static RAM
3. IS64WV6416BLL-10TLI - 64K x 16 Low-Power CMOS Static RAM

These alternative models offer similar functionality and can be considered as substitutes for IS61VF102418A-6.5B3I-TR in various applications.

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