IS61NLP51218B-200TQLI-TR

Product Overview

Category

IS61NLP51218B-200TQLI-TR belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval purposes.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable operation

Package

IS61NLP51218B-200TQLI-TR is available in a small outline package (SOP) format.

Essence

The essence of this product lies in its ability to store and retrieve digital information efficiently and reliably.

Packaging/Quantity

IS61NLP51218B-200TQLI-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Non-Volatile RAM (NVRAM)
• Memory Size: 512 kilobits (64 kilobytes)
• Access Time: 200 nanoseconds
• Supply Voltage: 3.3 volts
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 10 years

Detailed Pin Configuration

The pin configuration of IS61NLP51218B-200TQLI-TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A16 - Address inputs
4. CE - Chip enable
5. OE - Output enable
6. WE - Write enable
7. I/O0-I/O7 - Data input/output lines

Functional Features

• Random access memory functionality
• Byte-wide data access
• Easy interfacing with microcontrollers and other digital systems
• Low standby current consumption
• Automatic power-down mode for further power savings

Advantages and Disadvantages

Advantages

• High-speed performance allows for quick data access
• Low power consumption prolongs battery life in portable devices
• Compact size enables integration into space-constrained designs
• Reliable operation ensures data integrity

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to traditional RAM

Working Principles

IS61NLP51218B-200TQLI-TR utilizes a combination of electronic components and semiconductor technology to store and retrieve digital information. It employs a non-volatile memory architecture, which means that the stored data is retained even when power is removed.

The memory cells within the IC are organized in a matrix-like structure, with each cell capable of storing a single bit of information. The address inputs determine the specific memory location to be accessed, while the control signals (CE, OE, WE) govern the read and write operations.

Detailed Application Field Plans

IS61NLP51218B-200TQLI-TR finds applications in various electronic devices, including but not limited to:

1. Mobile phones
2. Tablets
3. Digital cameras
4. Portable media players
5. Automotive electronics
6. Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61NLP51218B-200TQLI-TR include:

1. IS61LV25616AL-10TLI - 256 kilobit low voltage CMOS static RAM
2. IS62WV25616BLL-55TLI - 256 kilobit asynchronous SRAM
3. IS64WV12816DBLL-10TLI - 128 kilobit synchronous burst SRAM

These alternative models provide different specifications and features, allowing designers to choose the most suitable option for their specific application requirements.

In conclusion, IS61NLP51218B-200TQLI-TR is a high-speed, low-power non-volatile RAM IC that offers reliable data storage and retrieval capabilities. Its compact size and ease of integration make it suitable for various electronic devices across different industries. While it has limitations in terms of storage capacity and cost, alternative models provide flexibility for designers to meet their specific needs.