ISSI, Integrated Silicon Solution Inc
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
IS61LV6416-10BLI
Voir les détails DataSheets

IS61LV6416-10BLI

Product Overview

Category

IS61LV6416-10BLI belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

  • High-speed data access
  • Non-volatile memory
  • Low power consumption
  • Compact size

Package

IS61LV6416-10BLI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of IS61LV6416-10BLI lies in its ability to provide fast and reliable data storage in various electronic applications.

Packaging/Quantity

Each package of IS61LV6416-10BLI contains one SRAM chip.

Specifications

  • Model: IS61LV6416-10BLI
  • Memory Type: Static Random Access Memory (SRAM)
  • Capacity: 64 Megabits (8 Megabytes)
  • Operating Voltage: 3.3V
  • Access Time: 10 nanoseconds
  • Organization: 8M x 8 bits
  • Interface: Parallel
  • Package Type: SOIC

Detailed Pin Configuration

The pin configuration of IS61LV6416-10BLI is as follows:

  1. Vcc
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. CE#
  11. OE#
  12. WE#
  13. I/O0
  14. I/O1
  15. I/O2
  16. I/O3
  17. I/O4
  18. I/O5
  19. I/O6
  20. I/O7
  21. GND

Functional Features

  • High-speed data access allows for quick retrieval and storage of information.
  • Non-volatile memory ensures that data is retained even when power is disconnected.
  • Low power consumption makes it suitable for battery-powered devices.
  • Compact size enables integration into space-constrained electronic systems.

Advantages

  • Fast data access time improves overall system performance.
  • Non-volatile memory eliminates the need for constant data backup.
  • Low power consumption extends battery life in portable devices.
  • Compact size facilitates integration into small form factor designs.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Relatively higher cost per unit compared to alternative memory options.
  • Susceptible to data loss in case of power failure without proper backup mechanisms.

Working Principles

IS61LV6416-10BLI operates based on the principles of static random access memory. It uses flip-flops to store each bit of data, which can be accessed randomly without the need for refreshing. The chip maintains the stored data as long as power is supplied.

Detailed Application Field Plans

IS61LV6416-10BLI finds applications in various electronic devices, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial control systems

Detailed and Complete Alternative Models

  1. IS61LV25616AL-10TLI: 256 Megabit (32 Megabyte) SRAM chip with similar characteristics and package type.
  2. IS61LV12816L-10TLI: 128 Megabit (16 Megabyte) SRAM chip with comparable specifications and pin configuration.
  3. IS61LV51216AL-10TLI: 512 Megabit (64 Megabyte) SRAM chip offering higher storage capacity within the same product family.

These alternative models provide different storage capacities while maintaining similar features and compatibility with the target applications.

Word count: 457 words

Énumérez 10 questions et réponses courantes liées à l'application de IS61LV6416-10BLI dans les solutions techniques

Sure! Here are 10 common questions and answers related to the application of IS61LV6416-10BLI in technical solutions:

  1. Question: What is IS61LV6416-10BLI?
    - Answer: IS61LV6416-10BLI is a specific type of integrated circuit (IC) commonly known as a static random-access memory (SRAM). It has a capacity of 64 kilobits (8 kilobytes) and operates at a speed of 10 nanoseconds.

  2. Question: What are the typical applications of IS61LV6416-10BLI?
    - Answer: IS61LV6416-10BLI is often used in various technical solutions that require fast, low-power, and non-volatile memory storage. Some common applications include embedded systems, networking devices, telecommunications equipment, and industrial control systems.

  3. Question: What voltage does IS61LV6416-10BLI operate at?
    - Answer: IS61LV6416-10BLI operates at a supply voltage of 3.3 volts (V).

  4. Question: Can IS61LV6416-10BLI be used in battery-powered devices?
    - Answer: Yes, IS61LV6416-10BLI is designed to be power-efficient and can be used in battery-powered devices where low power consumption is crucial.

  5. Question: Does IS61LV6416-10BLI support multiple read and write operations simultaneously?
    - Answer: No, IS61LV6416-10BLI is a synchronous SRAM and supports only one read or write operation at a time.

  6. Question: What is the operating temperature range for IS61LV6416-10BLI?
    - Answer: The operating temperature range for IS61LV6416-10BLI is typically -40°C to +85°C.

  7. Question: Can IS61LV6416-10BLI be used in high-speed data processing applications?
    - Answer: Yes, IS61LV6416-10BLI has a fast access time of 10 nanoseconds, making it suitable for high-speed data processing applications.

  8. Question: Does IS61LV6416-10BLI have any built-in error correction capabilities?
    - Answer: No, IS61LV6416-10BLI does not have built-in error correction capabilities. If error correction is required, it needs to be implemented externally.

  9. Question: What is the package type for IS61LV6416-10BLI?
    - Answer: IS61LV6416-10BLI is available in a 44-pin TSOP (Thin Small Outline Package) form factor.

  10. Question: Are there any specific precautions to consider when using IS61LV6416-10BLI?
    - Answer: It is important to follow the manufacturer's datasheet and guidelines for proper handling, storage, and electrical connections. Additionally, care should be taken to avoid electrostatic discharge (ESD) during installation or handling of the IC.