IS61DDB451236A-250M3L

Product Overview

Category

IS61DDB451236A-250M3L belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable operation

Package

IS61DDB451236A-250M3L is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61DDB451236A-250M3L is typically packaged in reels or tubes, with a quantity of 250 units per package.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Organization: 4 banks x 4,194,304 words x 16 bits
• Operating Voltage: 2.5V
• Operating Temperature Range: -40°C to +85°C
• Clock Frequency: Up to 166 MHz
• Data Rate: 333 Mbps
• Interface: Parallel

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /OE
42. /CKE
43. /CLK
44. VSS

Functional Features

• High-speed data access
• Low power consumption in standby mode
• Automatic refresh capability
• Burst mode operation for efficient data transfer
• On-chip error correction code (ECC) for improved reliability

Advantages and Disadvantages

Advantages

• Fast data access speed
• Compact size
• Low power consumption
• Reliable operation
• Error correction capability

Disadvantages

• Limited storage capacity compared to other memory technologies
• Sensitive to electrical noise and interference

Working Principles

IS61DDB451236A-250M3L operates based on the principles of dynamic random access memory (DRAM). It stores digital information as charge in tiny capacitors within the memory cells. To read or write data, the appropriate row and column addresses are selected, and the charge is either sensed or modified.

Detailed Application Field Plans

IS61DDB451236A-250M3L finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Consumer electronics - Automotive systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61DDB451236A-250M3L include: - MT48LC32M16A2P-75 - K4S561632H-UC75 - HYB18T512800AF-3S

These models can be considered as alternatives based on their specifications, pin compatibility, and availability in the market.

In conclusion, IS61DDB451236A-250M3L is a high-speed, low-power dynamic random access memory (DRAM) integrated circuit. It offers reliable data storage and retrieval capabilities, making it suitable for various electronic devices. While it has limitations in terms of storage capacity and sensitivity to electrical noise, it provides advantages such as fast data access, compact size, and error correction capability. Alternative models are available for consideration based on specific requirements and availability.