IS42S32200L-7B

Product Overview

Category

IS42S32200L-7B belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used as a memory component in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed data transfer capabilities
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

The IS42S32200L-7B comes in a small outline dual in-line memory module (SODIMM) package. This compact form factor allows for easy integration into space-constrained devices.

Essence

The essence of IS42S32200L-7B lies in its ability to provide fast and efficient data storage and retrieval functions, enabling smooth operation of electronic devices.

Packaging/Quantity

The IS42S32200L-7B is typically packaged in trays or reels, with each package containing a specific quantity of memory modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 4 banks x 8 Megabits x 16 bits
• Operating Voltage: 3.3V
• Clock Frequency: 143 MHz
• Access Time: 7 ns
• Interface: Parallel

Detailed Pin Configuration

The IS42S32200L-7B has a total of 66 pins, which are assigned different functions. Here is a detailed pin configuration:

1. VDD - Power Supply
2. VSS - Ground
3. A0-A11 - Address Inputs
4. BA0-BA1 - Bank Address Inputs
5. DQ0-DQ15 - Data Inputs/Outputs
6. WE - Write Enable
7. CAS - Column Address Strobe
8. RAS - Row Address Strobe
9. CS - Chip Select
10. CLK - Clock Input
11. CKE - Clock Enable
12. DQM0-DQM3 - Data Mask

(Note: The above list is not exhaustive and only includes some of the important pins.)

Functional Features

• High-speed data transfer rate for efficient data processing.
• Low power consumption, making it suitable for battery-powered devices.
• Four-bank architecture allows for concurrent access to different memory locations.
• Burst mode operation enhances overall system performance.
• Auto-refresh and self-refresh modes ensure data integrity during power fluctuations.

Advantages and Disadvantages

Advantages

• Fast data transfer rate improves overall system performance.
• Compact package size enables easy integration into various devices.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to alternative memory options.
• Requires proper handling and static discharge precautions during installation.

Working Principles

The IS42S32200L-7B operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by applying appropriate row and column addresses and synchronizing the read/write operations with the clock signal.

Detailed Application Field Plans

The IS42S32200L-7B finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Its high-speed data transfer capabilities and reliable performance make it suitable for demanding applications that require efficient memory management.

Detailed and Complete Alternative Models

• IS42S16160D-7TLI: 16 Megabit SDRAM module with similar characteristics.
• IS45S16400F-7TLA1: 64 Megabit SDRAM module with higher storage capacity.
• MT48LC32M16A2P-75IT: 512 Megabit SDRAM module with larger capacity and faster access time.

(Note: The above list includes only a few alternative models and is not exhaustive.)

In conclusion, the IS42S32200L-7B is a high-performance SDRAM module that offers fast data transfer, low power consumption, and reliable performance. Its compact package size and versatile applications make it an ideal choice for various electronic devices. However, it has limitations in terms of storage capacity and cost compared to alternative memory options.