IS42S16160D-75ETL-TR

Product Overview

Category

IS42S16160D-75ETL-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and mobile devices for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S16160D-75ETL-TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S16160D-75ETL-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16160D-75ETL-TR is typically packaged in trays or reels, with each tray/reel containing a specific quantity of modules. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabytes (MB)
• Organization: 1M words x 16 bits
• Operating Voltage: 3.3 Volts (V)
• Speed Grade: 75 nanoseconds (ns)
• Interface: Parallel
• Pin Count: 54 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16160D-75ETL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /BA0
44. /BA1
45. VSS
46. VSS
47. VSS
48. VSS
49. VDDQ
50. VDDQ
51. VDDQ
52. VDDQ
53. VREF
54. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexibility in timing configuration

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity allows for the handling of extensive data requirements.
• Low power consumption helps conserve energy in electronic devices.
• Compact package size enables easy integration into various device designs.
• Reliable performance ensures stable operation over extended periods.

Disadvantages

• Limited capacity compared to higher-end memory modules.
• Relatively slower data transfer rate compared to newer memory technologies.

Working Principles

IS42S16160D-75ETL-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into rows and columns, allowing for efficient access and retrieval of data.

Detailed Application Field Plans

IS42S16160D-75ETL-TR finds application in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile devices - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS42S16160D-75ETL-TR include: - IS42S16320D-75ETL-TR - IS42S16400D-75ETL-TR - IS42S32160D-75ETL-TR - IS42S32320D-75ETL-TR - IS42S32400D