IS42S16160B-7TL

Product Overview

Category

IS42S16160B-7TL belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size

Package

IS42S16160B-7TL is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S16160B-7TL lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

IS42S16160B-7TL is typically packaged in trays or reels, with each containing a specific quantity of modules depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabytes (MB)
• Organization: 1M words x 16 bits
• Operating Voltage: 3.3 Volts (V)
• Clock Frequency: 143 MHz
• Access Time: 7 nanoseconds (ns)
• Interface: Parallel
• Pin Count: 54 pins

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /BA0
44. /BA1
45. VSS
46. VSS
47. VSS
48. VSS
49. VDDQ
50. VDDQ
51. VDDQ
52. VDDQ
53. VREF
54. VDD

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data processing
• Low power consumption prolongs battery life in mobile devices
• Large storage capacity accommodates extensive data requirements
• Compact package size allows for space-efficient integration

Disadvantages

• Limited capacity compared to higher-end memory modules
• Relatively slower access time compared to newer generations of DRAM

Working Principles

IS42S16160B-7TL operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending specific commands and addresses to the module, which activates the corresponding capacitors and retrieves the stored data.

Detailed Application Field Plans

IS42S16160B-7TL finds applications in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Mobile phones and tablets 4. Gaming consoles 5. Networking equipment 6. Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS42S16160B-7TL include: 1. MT48LC16M16A2P-75: 16MB SDRAM with similar specifications 2. K4S561632H-UC75: 16MB SDRAM with comparable features 3. HYB39S16160T-7: 16MB SDRAM offering similar performance

These alternative models can be considered based on specific requirements and availability.

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