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IPG20N04S409ATMA1

IPG20N04S409ATMA1

Product Overview

Category

The IPG20N04S409ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Enhanced ruggedness

Package

The IPG20N04S409ATMA1 is typically available in a TO-220 package.

Essence

This power MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 20A
  • On-Resistance (RDS(on)): 4.0mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 30nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPG20N04S409ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • Reduced heat generation
  • Improved system efficiency
  • Enhanced reliability

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Enhanced ruggedness

Disadvantages

  • Sensitive to electrostatic discharge (ESD)
  • Requires careful handling during assembly

Working Principles

The IPG20N04S409ATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPG20N04S409ATMA1 is widely used in the following applications: - Switching power supplies - Motor control - DC-DC converters - Inverters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPG20N04S409ATMA1 include: - IRF3205 - FDP8878 - STP80NF03L - AOD4184

In conclusion, the IPG20N04S409ATMA1 power MOSFET offers high-performance characteristics suitable for various high-power switching applications. Its low on-resistance, fast switching speed, and enhanced ruggedness make it an ideal choice for efficient power management and control in electronic circuits.

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Énumérez 10 questions et réponses courantes liées à l'application de IPG20N04S409ATMA1 dans les solutions techniques

  1. What is the maximum drain-source voltage of IPG20N04S409ATMA1?

    • The maximum drain-source voltage of IPG20N04S409ATMA1 is 40V.
  2. What is the continuous drain current rating of IPG20N04S409ATMA1?

    • The continuous drain current rating of IPG20N04S409ATMA1 is 20A.
  3. What is the on-state resistance (RDS(on)) of IPG20N04S409ATMA1?

    • The on-state resistance (RDS(on)) of IPG20N04S409ATMA1 is typically 4.09mΩ at VGS = 10V.
  4. What is the gate threshold voltage of IPG20N04S409ATMA1?

    • The gate threshold voltage of IPG20N04S409ATMA1 is typically 2V.
  5. Is IPG20N04S409ATMA1 suitable for high-frequency switching applications?

    • Yes, IPG20N04S409ATMA1 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
  6. What are the typical applications for IPG20N04S409ATMA1?

    • Typical applications for IPG20N04S409ATMA1 include power supplies, motor control, DC-DC converters, and load switches.
  7. Does IPG20N04S409ATMA1 have built-in protection features?

    • IPG20N04S409ATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
  8. What is the operating temperature range of IPG20N04S409ATMA1?

    • The operating temperature range of IPG20N04S409ATMA1 is typically -55°C to 175°C.
  9. Can IPG20N04S409ATMA1 be used in automotive applications?

    • Yes, IPG20N04S409ATMA1 is suitable for automotive applications, as it meets the necessary requirements for automotive electronics.
  10. What are the key advantages of using IPG20N04S409ATMA1 in technical solutions?

    • The key advantages of using IPG20N04S409ATMA1 include low on-state resistance, high current capability, and suitability for various power management applications.