IPD90N03S4L03ATMA1

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High power handling, low on-resistance, fast switching speed
• Package: TO-252-3 (DPAK)
• Essence: Efficient power management
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Voltage Rating: 30V
• Current Rating: 90A
• On-Resistance: 3.4mΩ
• Gate Charge: 38nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD90N03S4L03ATMA1 follows the standard pin configuration for a TO-252-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient power management
• High current handling capability for demanding applications

Advantages and Disadvantages

Advantages

• High power handling capacity
• Low on-resistance for improved efficiency
• Fast switching speed for responsive power control

Disadvantages

• Sensitive to voltage spikes
• Requires careful thermal management at high currents

Working Principles

The IPD90N03S4L03ATMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.

Detailed Application Field Plans

The IPD90N03S4L03ATMA1 is suitable for a wide range of power switching applications, including: - Motor control systems - Power supplies - Battery management systems - LED lighting - Automotive electronics

Detailed and Complete Alternative Models

• IPD90N03S4L03: Similar specifications and package, without the ATMA1 suffix
• IPD90N03S4L05: Higher voltage rating of 50V with similar characteristics
• IPD90N03S4L02: Lower on-resistance of 2mΩ for higher efficiency

In conclusion, the IPD90N03S4L03ATMA1 is a high-performance power MOSFET designed for efficient power management in various applications, offering a balance of power handling, on-resistance, and switching speed.

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