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IPB80N06S2L06ATMA1
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IPB80N06S2L06ATMA1

Product Overview

Category

The IPB80N06S2L06ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications, particularly in power management and motor control systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Enhanced thermal performance

Package

The IPB80N06S2L06ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power conversion and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with varying quantities based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 80A
  • On-Resistance (RDS(on)): 6mΩ
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N06S2L06ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power loss
  • High current-carrying capability
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Enhanced thermal performance

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The IPB80N06S2L06ATMA1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB80N06S2L06ATMA1 is widely used in the following applications: - Motor control systems - Power supplies - Inverters - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPB80N06S2L06ATMA1 include: - IPB80N06S4L07ATMA1 - IPB80N06S2L04ATMA1 - IPB60R190C6

In conclusion, the IPB80N06S2L06ATMA1 is a high-performance power MOSFET with versatile applications in various electronic systems, offering efficient power management and control capabilities.

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Énumérez 10 questions et réponses courantes liées à l'application de IPB80N06S2L06ATMA1 dans les solutions techniques

  1. What is the maximum drain-source voltage of IPB80N06S2L06ATMA1?

    • The maximum drain-source voltage of IPB80N06S2L06ATMA1 is 60V.

  2. What is the continuous drain current rating of IPB80N06S2L06ATMA1?

    • The continuous drain current rating of IPB80N06S2L06ATMA1 is 80A.

  3. What is the on-state resistance (RDS(on)) of IPB80N06S2L06ATMA1?

    • The on-state resistance (RDS(on)) of IPB80N06S2L06ATMA1 is typically 6mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPB80N06S2L06ATMA1?

    • The gate threshold voltage of IPB80N06S2L06ATMA1 is typically 2V.

  5. What is the power dissipation of IPB80N06S2L06ATMA1?

    • The power dissipation of IPB80N06S2L06ATMA1 is 300W.

  6. What are the typical applications for IPB80N06S2L06ATMA1?

    • IPB80N06S2L06ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.

  7. What is the operating temperature range of IPB80N06S2L06ATMA1?

    • The operating temperature range of IPB80N06S2L06ATMA1 is -55°C to 175°C.

  8. Does IPB80N06S2L06ATMA1 have built-in ESD protection?

    • Yes, IPB80N06S2L06ATMA1 has built-in ESD protection.

  9. What is the package type of IPB80N06S2L06ATMA1?

    • IPB80N06S2L06ATMA1 comes in a TO-263-3 package.

  10. Is IPB80N06S2L06ATMA1 RoHS compliant?

    • Yes, IPB80N06S2L06ATMA1 is RoHS compliant.