IPB80N04S2L03ATMA1

Product Overview

Category

The IPB80N04S2L03ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

• High current-carrying capability
• Low on-state resistance
• Fast switching speed
• Low gate charge
• High ruggedness

Package

The IPB80N04S2L03ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): [specification]
• Continuous Drain Current (ID): [specification]
• On-State Resistance (RDS(on)): [specification]
• Gate-Source Voltage (VGS): [specification]
• Total Gate Charge (Qg): [specification]

Detailed Pin Configuration

The IPB80N04S2L03ATMA1 features a standard pin configuration with clearly labeled pins for easy integration into circuit designs.

Functional Features

• High current handling capacity
• Low power dissipation
• Enhanced thermal performance
• Compatibility with various driving circuits
• Robust and reliable operation under high-stress conditions

Advantages

• Efficient power management
• Reduced heat dissipation
• Improved system reliability
• Enhanced circuit performance
• Suitable for high-frequency switching applications

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to electrostatic discharge (ESD)
• Requires careful handling during assembly and soldering

Working Principles

The IPB80N04S2L03ATMA1 operates based on the principles of field-effect transistors, utilizing its low on-state resistance and fast switching characteristics to control the flow of high currents in electronic circuits.

Detailed Application Field Plans

The IPB80N04S2L03ATMA1 is widely used in: - Switch-mode power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

• IPB60R099CP - Similar specifications with lower on-state resistance
• IPB50N06S4-08 - Lower current rating but suitable for cost-sensitive applications
• IPB30N06S2-30 - Lower voltage rating with comparable performance in low-power applications

In conclusion, the IPB80N04S2L03ATMA1 is a versatile power MOSFET that offers high performance and reliability for various high-power switching applications. Its advanced characteristics and compatibility with diverse circuit designs make it an ideal choice for modern electronic systems.

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