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IPB80N04S2H4ATMA1
Product Overview
Category
The IPB80N04S2H4ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Avalanche energy specified
- RoHS compliant
Package
The IPB80N04S2H4ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels with a quantity varying based on customer requirements.
Specifications
- Drain-Source Voltage (VDS): 40V
- Continuous Drain Current (ID): 80A
- On-Resistance (RDS(on)): 4.2mΩ
- Total Gate Charge (Qg): 60nC
- Avalanche Energy (EAS): 280mJ
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB80N04S2H4ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching characteristics
- Enhanced ruggedness and reliability
Advantages
- Efficient power handling
- Reduced heat dissipation
- Improved system performance
- Enhanced circuit protection
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to electrostatic discharge (ESD)
Working Principles
The IPB80N04S2H4ATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB80N04S2H4ATMA1 is widely used in: - Switch-mode power supplies - Motor control systems - Electronic lighting ballasts - Automotive applications - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB80N04S2H4ATMA1 include: - IRF3205 - FDP8870 - STP80NF03L
In conclusion, the IPB80N04S2H4ATMA1 is a high-performance power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of applications in various industries.
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Énumérez 10 questions et réponses courantes liées à l'application de IPB80N04S2H4ATMA1 dans les solutions techniques
What is the maximum drain-source voltage of IPB80N04S2H4ATMA1?
- The maximum drain-source voltage of IPB80N04S2H4ATMA1 is 40V.
What is the continuous drain current rating of IPB80N04S2H4ATMA1?
- The continuous drain current rating of IPB80N04S2H4ATMA1 is 80A.
What is the on-resistance of IPB80N04S2H4ATMA1?
- The on-resistance of IPB80N04S2H4ATMA1 is typically 4.2mΩ at Vgs=10V.
What is the gate threshold voltage of IPB80N04S2H4ATMA1?
- The gate threshold voltage of IPB80N04S2H4ATMA1 is typically 2V.
Is IPB80N04S2H4ATMA1 suitable for high-frequency switching applications?
- Yes, IPB80N04S2H4ATMA1 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
What is the operating temperature range of IPB80N04S2H4ATMA1?
- The operating temperature range of IPB80N04S2H4ATMA1 is -55°C to 175°C.
Does IPB80N04S2H4ATMA1 have built-in ESD protection?
- Yes, IPB80N04S2H4ATMA1 has built-in ESD protection, making it more robust in handling electrostatic discharge events.
Can IPB80N04S2H4ATMA1 be used in automotive applications?
- Yes, IPB80N04S2H4ATMA1 is designed for automotive applications and meets the necessary standards for reliability and performance in automotive environments.
What package type does IPB80N04S2H4ATMA1 come in?
- IPB80N04S2H4ATMA1 comes in a TO-263-7 package.
Are there any application notes or reference designs available for using IPB80N04S2H4ATMA1 in technical solutions?
- Yes, there are application notes and reference designs available from the manufacturer to assist in the implementation of IPB80N04S2H4ATMA1 in various technical solutions.