IPB79CN10N G

Introduction

The IPB79CN10N G is a semiconductor product that belongs to the category of power MOSFETs. This device is commonly used in various electronic applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the IPB79CN10N G.

Basic Information Overview

• Category: Power MOSFET
• Use: Electronic applications requiring power switching and amplification
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-263-3 (D2PAK)
• Essence: Efficient power management and control
• Packaging/Quantity: Typically packaged in reels or tubes, quantity varies by manufacturer

Specifications

• Voltage Rating: 100V
• Current Rating: 79A
• On-Resistance: 7.9 mΩ
• Gate Charge: 45nC
• Operating Temperature: -55°C to 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3

Detailed Pin Configuration

The IPB79CN10N G typically has three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Output terminal connected to the load 3. Source (S): Ground reference for the MOSFET

Functional Features

• High voltage capability allows for use in various power applications
• Low on-resistance minimizes power losses and improves efficiency
• Fast switching speed enables rapid power control

Advantages and Disadvantages

Advantages

• Efficient power management
• Low power dissipation
• Fast response time

Disadvantages

• Sensitivity to static electricity
• Gate drive requirements

Working Principles

The IPB79CN10N G operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can effectively switch high-power loads on and off.

Detailed Application Field Plans

The IPB79CN10N G finds extensive use in the following applications: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - Automotive systems

Detailed and Complete Alternative Models

Some alternative models to the IPB79CN10N G include: - IRFB7434PbF - FDP7030BL - IPP60R190E6

In conclusion, the IPB79CN10N G is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.

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