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IKZ75N65ES5XKSA1

IKZ75N65ES5XKSA1

Product Overview

Category

The IKZ75N65ES5XKSA1 belongs to the category of power MOSFETs.

Use

It is used for high-power applications such as in power supplies, motor control, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IKZ75N65ES5XKSA1 is typically available in a TO-247 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged individually and comes in quantities suitable for production or prototyping needs.

Specifications

  • Voltage Rating: 650V
  • Current Rating: 75A
  • On-Resistance: 0.065 ohms
  • Gate Threshold Voltage: 4V
  • Total Gate Charge: 110nC
  • Diode Forward Voltage: 1.3V

Detailed Pin Configuration

The IKZ75N65ES5XKSA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in demanding applications.
  • Low on-resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient power control.

Advantages

  • High voltage rating suitable for diverse applications.
  • Low on-resistance for improved efficiency.
  • Fast switching speed enhances performance.

Disadvantages

  • May require careful handling due to its high voltage capabilities.
  • Higher cost compared to lower-rated MOSFETs.

Working Principles

The IKZ75N65ES5XKSA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IKZ75N65ES5XKSA1 is well-suited for use in: - Power supply units for industrial equipment - Motor control systems in electric vehicles - Inverters for renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IKZ75N65ES5XKSA1 include: - IRFP4568PBF - FDPF75N65S3R - STW75N65M5

In conclusion, the IKZ75N65ES5XKSA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component for various high-power electronic applications.

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Énumérez 10 questions et réponses courantes liées à l'application de IKZ75N65ES5XKSA1 dans les solutions techniques

  1. What is the maximum voltage rating of IKZ75N65ES5XKSA1?

    • The maximum voltage rating of IKZ75N65ES5XKSA1 is 650V.
  2. What is the typical on-state resistance of IKZ75N65ES5XKSA1?

    • The typical on-state resistance of IKZ75N65ES5XKSA1 is 75 mΩ.
  3. What is the maximum continuous drain current of IKZ75N65ES5XKSA1?

    • The maximum continuous drain current of IKZ75N65ES5XKSA1 is 75A.
  4. Can IKZ75N65ES5XKSA1 be used in high-frequency switching applications?

    • Yes, IKZ75N65ES5XKSA1 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
  5. Does IKZ75N65ES5XKSA1 require a heatsink for operation?

    • It is recommended to use a heatsink with IKZ75N65ES5XKSA1 to ensure optimal thermal performance, especially in high-power applications.
  6. What are the typical applications of IKZ75N65ES5XKSA1?

    • IKZ75N65ES5XKSA1 is commonly used in power supplies, motor control, inverters, and other high-power switching applications.
  7. Is IKZ75N65ES5XKSA1 suitable for automotive applications?

    • Yes, IKZ75N65ES5XKSA1 is designed to meet the requirements for automotive applications, such as electric vehicle power systems.
  8. What is the gate-source threshold voltage of IKZ75N65ES5XKSA1?

    • The gate-source threshold voltage of IKZ75N65ES5XKSA1 is typically around 4V.
  9. Can IKZ75N65ES5XKSA1 be used in parallel to increase current handling capability?

    • Yes, IKZ75N65ES5XKSA1 can be used in parallel to increase current handling capability in high-power applications.
  10. What are the key advantages of using IKZ75N65ES5XKSA1 in technical solutions?

    • The key advantages of using IKZ75N65ES5XKSA1 include its high voltage rating, low on-state resistance, fast switching speed, and suitability for various high-power applications.