Infineon Technologies
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IGT60R190D1SATMA1
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IGT60R190D1SATMA1

Product Overview

Category

The IGT60R190D1SATMA1 belongs to the category of power transistors.

Use

It is used for high-power applications in electronic circuits, such as in power supplies, motor control, and audio amplifiers.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance
  • High ruggedness

Package

The IGT60R190D1SATMA1 comes in a TO-3P(N) package.

Essence

This power transistor is essential for efficiently controlling high-power electrical loads in various electronic systems.

Packaging/Quantity

The IGT60R190D1SATMA1 is typically packaged individually and sold as single units.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 60A
  • Power Dissipation: 190W
  • Input Capacitance: 3000pF
  • On-Resistance: 0.19Ω

Detailed Pin Configuration

The IGT60R190D1SATMA1 has a standard pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • High voltage capability for robust performance
  • Low input capacitance for fast switching
  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient operation

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for demanding applications
  • Low input capacitance for improved efficiency
  • Fast switching speed for responsive operation

Disadvantages

  • Higher cost compared to lower-rated transistors
  • Requires careful handling due to high voltage capability

Working Principles

The IGT60R190D1SATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IGT60R190D1SATMA1 is ideal for use in: - High-power switch mode power supplies - Motor control systems - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IGT60R190D1SATMA1 include: - IXTQ96N20T - IRFP4668PBF - STW75N60M2

In conclusion, the IGT60R190D1SATMA1 is a high-performance power transistor suitable for a wide range of high-power electronic applications, offering robust characteristics and efficient operation.

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Énumérez 10 questions et réponses courantes liées à l'application de IGT60R190D1SATMA1 dans les solutions techniques

  1. What is the maximum operating temperature of IGT60R190D1SATMA1?

    • The maximum operating temperature of IGT60R190D1SATMA1 is 150°C.

  2. What is the typical gate charge of IGT60R190D1SATMA1?

    • The typical gate charge of IGT60R190D1SATMA1 is 110nC.

  3. What is the drain-source voltage rating of IGT60R190D1SATMA1?

    • The drain-source voltage rating of IGT60R190D1SATMA1 is 650V.

  4. What is the on-state resistance of IGT60R190D1SATMA1?

    • The on-state resistance of IGT60R190D1SATMA1 is typically 0.19 ohms.

  5. What is the maximum drain current of IGT60R190D1SATMA1?

    • The maximum drain current of IGT60R190D1SATMA1 is 60A.

  6. What are the typical applications for IGT60R190D1SATMA1?

    • IGT60R190D1SATMA1 is commonly used in motor control, solar inverters, and welding equipment.

  7. What is the gate threshold voltage of IGT60R190D1SATMA1?

    • The gate threshold voltage of IGT60R190D1SATMA1 is typically 4V.

  8. What is the input capacitance of IGT60R190D1SATMA1?

    • The input capacitance of IGT60R190D1SATMA1 is typically 3700pF.

  9. What is the output capacitance of IGT60R190D1SATMA1?

    • The output capacitance of IGT60R190D1SATMA1 is typically 800pF.

  10. What are the recommended mounting techniques for IGT60R190D1SATMA1?

    • IGT60R190D1SATMA1 should be mounted using a thermally conductive but electrically insulating material to ensure proper heat dissipation.