71V416L12PHG

Product Overview

Category

The 71V416L12PHG belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The 71V416L12PHG is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The 71V416L12PHG is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit x 16-bit
• Supply Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: Plastic TSOP II

Detailed Pin Configuration

The 71V416L12PHG has a total of 48 pins, which are assigned specific functions as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. CE#
20. WE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. I/O8
30. I/O9
31. I/O10
32. I/O11
33. I/O12
34. I/O13
35. I/O14
36. I/O15
37. VSS
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed access: The 71V416L12PHG offers fast data retrieval and storage capabilities, making it suitable for applications that require quick response times.
• Low power consumption: This product is designed to minimize power usage, making it ideal for battery-powered devices or energy-efficient systems.
• Reliable performance: The 71V416L12PHG ensures reliable operation even in demanding environments, providing consistent data integrity.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Large storage capacity accommodates extensive data requirements.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity in critical applications.

Disadvantages

• Limited compatibility with certain system architectures.
• Relatively higher cost compared to alternative memory technologies.

Working Principles

The 71V416L12PHG utilizes static random access memory (SRAM) technology. It stores data in a volatile manner, meaning the information is lost when power is removed. The SRAM cells within the device consist of flip-flops that retain their state as long as power is supplied. Accessing data from the memory involves sending appropriate address signals and control signals to read or write data.

Detailed Application Field Plans

The 71V416L12PHG finds application in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial automation systems - Consumer electronics

Detailed and Complete Alternative Models

1. 71V416L10PHG: Similar to the 71V416L12PHG, but with a faster access time of 10 ns.
2. 71V416S10PHG: A lower-power variant of the 71V416L12PHG, designed for energy-efficient applications.
3. 71V416L15PHG: Offers a larger storage capacity of 8 Megabit x 16-bit.

These alternative models provide options with varying specifications to cater to different application requirements.

Word count: 511 words