MB85RS128BPNF-G-JNERE1

Product Overview

Category: Non-volatile RAM (NVRAM)

Use: MB85RS128BPNF-G-JNERE1 is a non-volatile RAM chip that combines the benefits of both RAM and flash memory. It can be used in various applications where data needs to be stored even when power is turned off.

Characteristics: - Non-volatile: Retains data even without power - High-speed read/write operations - Low power consumption - Wide operating voltage range - High endurance: Supports up to 10^12 read/write cycles - Data retention period of 10 years or more

Package: MB85RS128BPNF-G-JNERE1 is available in a compact package, making it suitable for space-constrained applications.

Essence: The essence of MB85RS128BPNF-G-JNERE1 lies in its ability to provide non-volatile storage with high-speed read/write operations, low power consumption, and a wide operating voltage range.

Packaging/Quantity: MB85RS128BPNF-G-JNERE1 is typically sold in reels or trays, with a quantity of [insert quantity].

Specifications

• Memory Capacity: 128 kilobits (16 kilobytes)
• Interface: I2C
• Operating Voltage: 1.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years or more
• Endurance: Up to 10^12 read/write cycles

Detailed Pin Configuration

The MB85RS128BPNF-G-JNERE1 chip has the following pin configuration:

| Pin Name | Description | |----------|-------------| | VCC | Power supply voltage | | GND | Ground | | SDA | Serial data input/output for I2C communication | | SCL | Serial clock input for I2C communication | | WP | Write protect pin (optional) |

Functional Features

• Non-volatile storage: Retains data even without power
• High-speed read/write operations: Enables fast data access
• Low power consumption: Ideal for battery-powered devices
• Wide operating voltage range: Can be used in various voltage environments
• High endurance: Supports a large number of read/write cycles
• Data retention period of 10 years or more: Ensures long-term data integrity

Advantages and Disadvantages

Advantages: - Non-volatile storage eliminates the need for external backup - High-speed read/write operations enhance system performance - Low power consumption prolongs battery life - Wide operating voltage range allows for versatile applications - High endurance ensures durability and reliability - Long data retention period provides data integrity over time

Disadvantages: - Limited memory capacity compared to other storage solutions - Relatively higher cost per kilobit compared to traditional RAM

Working Principles

MB85RS128BPNF-G-JNERE1 utilizes ferroelectric random-access memory (FeRAM) technology. It stores data by utilizing the unique properties of ferroelectric materials, which can retain their polarization state even when the power is turned off. This allows for non-volatile storage with high-speed read/write operations.

Detailed Application Field Plans

MB85RS128BPNF-G-JNERE1 can be applied in various fields, including but not limited to: - Industrial automation systems - Internet of Things (IoT) devices - Automotive electronics - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to MB85RS128BPNF-G-JNERE1 include: - MB85RS128BPNF-G-JNERE2: Similar specifications with minor differences - MB85RS256BPNF-G-JNERE1: Higher memory capacity (256 kilobits) - MB85RS64BPNF-G-JNERE1: Lower memory capacity (64 kilobits)

These alternative models offer different memory capacities or slight variations in specifications, allowing users to choose the most suitable option for their specific requirements.

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