Voir les spécifications pour les détails du produit.
BLF8G10L-160,112
Product Overview
Category
The BLF8G10L-160,112 belongs to the category of RF power transistors.
Use
It is used in high-power amplifiers for various applications such as radio frequency (RF) communication systems and radar systems.
Characteristics
- High power handling capability
- Broadband performance
- High efficiency
- Reliable operation under extreme conditions
Package
The BLF8G10L-160,112 is typically available in a ceramic package with metal flange for efficient heat dissipation.
Essence
This product is essential for achieving high power amplification in RF systems while maintaining efficiency and reliability.
Packaging/Quantity
The BLF8G10L-160,112 is usually packaged individually and quantities may vary based on customer requirements.
Specifications
- Frequency Range: 1.0 - 2.0 GHz
- Output Power: 160W
- Gain: 10dB
- Efficiency: >60%
- Operating Voltage: 28V
Detailed Pin Configuration
The detailed pin configuration of BLF8G10L-160,112 includes input, output, and bias connections, which are crucial for proper integration into RF amplifier circuits.
Functional Features
- High linearity
- Wide bandwidth
- Excellent thermal stability
- Built-in protection features against overdrive and overtemperature conditions
Advantages
- High power output
- Wide operating frequency range
- Robust construction for rugged environments
- Excellent efficiency for reduced power consumption
Disadvantages
- Higher cost compared to lower power alternatives
- Requires careful thermal management due to high power dissipation
Working Principles
The BLF8G10L-160,112 operates based on the principles of RF power amplification using advanced semiconductor technologies, ensuring efficient conversion of electrical power to RF signals.
Detailed Application Field Plans
The BLF8G10L-160,112 is ideally suited for use in: - Base station amplifiers for cellular networks - Radar systems for defense and aerospace applications - Broadcast transmitters for television and radio - Industrial RF heating and plasma generation systems
Detailed and Complete Alternative Models
- BLF7G22LS-160,112
- BLF6G20LS-160,112
- BLF9G20LS-160,112
In conclusion, the BLF8G10L-160,112 is a high-performance RF power transistor designed for demanding applications that require high power amplification, wide bandwidth, and excellent efficiency.
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Énumérez 10 questions et réponses courantes liées à l'application de BLF8G10L-160,112 dans les solutions techniques
What is the maximum operating frequency of BLF8G10L-160,112?
- The maximum operating frequency of BLF8G10L-160,112 is 1.6 GHz.
What is the typical gain of BLF8G10L-160,112?
- The typical gain of BLF8G10L-160,112 is 10 dB.
What is the input power for BLF8G10L-160,112?
- The input power for BLF8G10L-160,112 is typically 28 dBm.
What is the output power capability of BLF8G10L-160,112?
- The output power capability of BLF8G10L-160,112 is typically 39 dBm.
What is the recommended supply voltage for BLF8G10L-160,112?
- The recommended supply voltage for BLF8G10L-160,112 is 32 V.
What is the typical efficiency of BLF8G10L-160,112?
- The typical efficiency of BLF8G10L-160,112 is 55%.
What are the typical applications for BLF8G10L-160,112?
- BLF8G10L-160,112 is commonly used in RF power amplifiers for wireless infrastructure applications.
What is the package type of BLF8G10L-160,112?
- BLF8G10L-160,112 comes in a ceramic SMD package.
What are the thermal resistance values for BLF8G10L-160,112?
- The thermal resistance values for BLF8G10L-160,112 are 0.5°C/W (junction to case) and 50°C/W (junction to ambient).
What are the key differences between BLF8G10L-160,112 and its previous versions?
- BLF8G10L-160,112 offers improved efficiency and power handling compared to its previous versions, making it suitable for higher performance applications.