Voir les spécifications pour les détails du produit.
BLF7G27LS-90P,112
Product Overview
Category
The BLF7G27LS-90P,112 belongs to the category of RF power transistors.
Use
It is used in high-power RF applications such as industrial, scientific, medical (ISM) and broadcast and aerospace systems.
Characteristics
- High power handling capability
- Broadband performance
- High efficiency
- High gain
Package
The BLF7G27LS-90P,112 comes in a compact and rugged package suitable for various mounting configurations.
Essence
The essence of this product lies in its ability to deliver high power RF signals with exceptional efficiency and reliability.
Packaging/Quantity
The BLF7G27LS-90P,112 is typically packaged individually and is available in specified quantities as per customer requirements.
Specifications
- Frequency Range: 2.5 - 2.7 GHz
- Output Power: 90W
- Gain: 17 dB
- Efficiency: >60%
- Voltage: 32V
- Current: 15A
Detailed Pin Configuration
The detailed pin configuration of BLF7G27LS-90P,112 includes input, output, bias, and ground pins, each designed to facilitate efficient integration into RF circuits.
Functional Features
- High linearity
- Excellent thermal stability
- Integrated ESD protection
- Wide voltage operating range
Advantages
- High power handling capacity
- Wide frequency coverage
- Reliable and robust design
- Suitable for demanding RF applications
Disadvantages
- Higher cost compared to lower power alternatives
- Requires careful thermal management due to high power dissipation
Working Principles
The BLF7G27LS-90P,112 operates on the principles of class AB operation, utilizing advanced semiconductor technology to amplify RF signals with high efficiency and linearity.
Detailed Application Field Plans
The BLF7G27LS-90P,112 is ideally suited for use in: - Radar systems - Wireless communication infrastructure - Satellite communication systems - RF heating and plasma generation systems
Detailed and Complete Alternative Models
- BLF888A
- BLF578XR
- MRF13750H
In conclusion, the BLF7G27LS-90P,112 is a high-performance RF power transistor designed to meet the demands of modern high-power RF applications, offering exceptional efficiency, reliability, and performance across a wide range of frequencies and applications.
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Énumérez 10 questions et réponses courantes liées à l'application de BLF7G27LS-90P,112 dans les solutions techniques
What is the operating frequency of BLF7G27LS-90P,112?
- The operating frequency of BLF7G27LS-90P,112 is 2.7 GHz.
What is the maximum output power of BLF7G27LS-90P,112?
- The maximum output power of BLF7G27LS-90P,112 is 90 Watts.
What type of modulation does BLF7G27LS-90P,112 support?
- BLF7G27LS-90P,112 supports various modulation types including QPSK, QAM, and OFDM.
What is the typical efficiency of BLF7G27LS-90P,112?
- The typical efficiency of BLF7G27LS-90P,112 is around 45%.
What are the recommended supply voltage and current for BLF7G27LS-90P,112?
- The recommended supply voltage for BLF7G27LS-90P,112 is 32V, and the recommended supply current is 15A.
Does BLF7G27LS-90P,112 require external matching networks?
- Yes, BLF7G27LS-90P,112 requires external matching networks for optimal performance.
What are the typical thermal resistance values for BLF7G27LS-90P,112?
- The typical thermal resistance values for BLF7G27LS-90P,112 are 0.25°C/W (junction to case) and 1.5°C/W (junction to ambient).
Is BLF7G27LS-90P,112 suitable for outdoor applications?
- Yes, BLF7G27LS-90P,112 is designed for outdoor applications and can withstand harsh environmental conditions.
What are the recommended heatsinking requirements for BLF7G27LS-90P,112?
- It is recommended to use a high-performance heatsink with adequate thermal conductivity to dissipate heat effectively.
Are there any specific ESD protection recommendations for BLF7G27LS-90P,112?
- It is recommended to implement proper ESD protection measures in the circuit design to safeguard BLF7G27LS-90P,112 from electrostatic discharge events.