BLF7G24LS-100,118

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: SOT539A - Essence: Gallium Nitride (GaN) Technology - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 0.03 - 2.5 GHz - Output Power: 100 W - Gain: 24 dB - Efficiency: 70% - Voltage: 32 V - Current: 16 A - Thermal Resistance: 0.3 °C/W

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not Connected - Pin 5: Not Connected

Functional Features: - High Power Amplification - Broad Frequency Range - High Efficiency - Excellent Linearity - Robust Thermal Performance

Advantages: - High Power Output - Wide Frequency Coverage - Low Distortion - Enhanced Thermal Management

Disadvantages: - Higher Cost Compared to Traditional Transistors - Sensitive to Voltage Spikes

Working Principles: The BLF7G24LS-100,118 utilizes GaN technology to amplify RF signals. When a signal is applied to the gate terminal, the transistor allows a larger current to flow from the drain to the source, effectively amplifying the input signal.

Detailed Application Field Plans: - Telecommunications Infrastructure - Radar Systems - Wireless Base Stations - Satellite Communication - Test and Measurement Equipment

Detailed and Complete Alternative Models: - BLF878S - BLF888A - BLF184XR

This comprehensive entry provides an in-depth understanding of the BLF7G24LS-100,118 RF Power Transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.