AS6C4016-55BINTR

Product Overview

Category

AS6C4016-55BINTR belongs to the category of semiconductor memory devices.

Use

It is primarily used as a random access memory (RAM) device in various electronic systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Large storage capacity

Package

AS6C4016-55BINTR is available in a compact and durable package, ensuring easy integration into electronic circuits.

Essence

The essence of AS6C4016-55BINTR lies in its ability to provide fast and reliable data storage and retrieval functions.

Packaging/Quantity

This product is typically packaged in reels or trays, with each containing a specific quantity of AS6C4016-55BINTR units.

Specifications

• Operating Voltage: 3.0V - 3.6V
• Access Time: 55ns
• Organization: 4M x 16 bits
• Interface: Parallel
• Data Retention: More than 10 years
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

AS6C4016-55BINTR follows a standard pin configuration for parallel memory devices. The pins are labeled as follows:

1. Vcc (Power Supply)
2. A0-A19 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE (Write Enable)
5. OE (Output Enable)
6. CE (Chip Enable)
7. UB/LB (Upper Byte/Lower Byte Control)
8. NC (No Connection)
9. GND (Ground)

Functional Features

• Fast read and write operations
• Easy interfacing with microcontrollers and other digital devices
• Low standby current consumption
• Automatic power-down mode for further power savings
• Built-in error correction code (ECC) for data integrity

Advantages and Disadvantages

Advantages

• High-speed operation enhances system performance
• Low power consumption prolongs battery life in portable devices
• Non-volatile storage ensures data retention even during power loss
• Large storage capacity accommodates complex applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance due to finite write cycles
• Sensitive to electrostatic discharge (ESD) and voltage spikes

Working Principles

AS6C4016-55BINTR operates based on the principles of volatile memory, where data is stored temporarily and requires continuous power supply to retain its contents. It utilizes a combination of transistors and capacitors to store and retrieve data in a binary format.

Detailed Application Field Plans

AS6C4016-55BINTR finds extensive application in various electronic systems, including but not limited to: - Personal computers - Mobile devices - Automotive electronics - Industrial control systems - Medical equipment - Communication devices

Detailed and Complete Alternative Models

1. AS6C4008-55BINTR: Similar specifications with reduced storage capacity (4M x 8 bits).
2. AS6C8008-55BINTR: Lower storage capacity (2M x 8 bits) but compatible pin configuration.
3. AS6C16008-55BINTR: Higher storage capacity (8M x 8 bits) with similar characteristics.

These alternative models provide flexibility in choosing the appropriate memory device based on specific application requirements.

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