AS4C32M8D1-5TIN

Product Overview

Category

AS4C32M8D1-5TIN belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage component in electronic devices such as computers, smartphones, and other digital systems.

Characteristics

• High-speed operation
• Low power consumption
• Compact size
• Reliable performance

Package

AS4C32M8D1-5TIN is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS4C32M8D1-5TIN lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

AS4C32M8D1-5TIN is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Part Number: AS4C32M8D1-5TIN
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 32M words x 8 bits
• Operating Voltage: 3.3V
• Speed Grade: -5
• Interface: Parallel
• Clock Frequency: 166 MHz
• Access Time: 5 ns
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

AS4C32M8D1-5TIN has a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. A8
21. A9
22. A10
23. A11
24. A12
25. A13
26. A14
27. A15
28. A16
29. A17
30. A18
31. A19
32. A20
33. A21
34. A22
35. A23
36. A24
37. A25
38. A26
39. A27
40. A28
41. A29
42. A30
43. A31
44. WE#
45. CAS#
46. RAS#
47. CKE
48. CS#
49. BA0
50. BA1
51. CLK
52. DQM0
53. DQM1
54. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency
• Auto precharge and power-down modes for power savings
• Easy integration into various electronic systems

Advantages and Disadvantages

Advantages

• Fast and efficient data storage and retrieval
• Low power consumption
• Compact size for space-constrained applications
• Reliable performance in various operating conditions

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit of storage compared to alternative options

Working Principles

AS4C32M8D1-5TIN operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers and employs a series of address lines to access specific memory locations. The data is stored in capacitors within the memory cells, which are refreshed periodically to maintain data integrity.

Detailed Application Field Plans

AS4C32M8D1-5TIN finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones and tablets - Networking equipment - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to AS4C32M8D1-5TIN include: - AS4C16M8D1-5TIN: 16M words x 8 bits SDRAM with similar specifications - AS4C64M8D1-5TIN: 64M words x 8 bits SDRAM with higher storage capacity - AS4C128M8D1-5TIN: 128M words x 8 bits SDRAM with even higher